Active Vertically Conducting Electronic Devices Based on Gallium Nitride and its Alloys Grown on Silicon Substrates with Buffer Layers of Zirconium DiBoride

John Kouvetakis (Inventor)

Research output: Patent

Abstract

Electrical contacts made to group III nitride electronic devices are often difficult, especially for p-contacts. High work function metals such as Pd and Pt have to be used to achieve ohmic contacts. However, with ZrB2 as a buffer layer on a highly boron-doped p-type Si(111) substrate, a built-in p-contact is formed on the bottom side of a vertically conducting device. The top side of the device can be the n-contact, which is more easily fabricated than a p-contact. Using this method of contact fabrication, not only more dies per wafer can be achieved because of the smaller size of the vertically conducting device, but the ease with which the p-contact is formed contributes greatly to cost reduction in the device fabrication process.
Original languageEnglish (US)
StatePublished - Jun 15 2004

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gallium nitrides
buffers
conduction
silicon
electronics
electric contacts
fabrication
cost reduction
nitrides
boron
wafers
metals

Cite this

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N2 - Electrical contacts made to group III nitride electronic devices are often difficult, especially for p-contacts. High work function metals such as Pd and Pt have to be used to achieve ohmic contacts. However, with ZrB2 as a buffer layer on a highly boron-doped p-type Si(111) substrate, a built-in p-contact is formed on the bottom side of a vertically conducting device. The top side of the device can be the n-contact, which is more easily fabricated than a p-contact. Using this method of contact fabrication, not only more dies per wafer can be achieved because of the smaller size of the vertically conducting device, but the ease with which the p-contact is formed contributes greatly to cost reduction in the device fabrication process.

AB - Electrical contacts made to group III nitride electronic devices are often difficult, especially for p-contacts. High work function metals such as Pd and Pt have to be used to achieve ohmic contacts. However, with ZrB2 as a buffer layer on a highly boron-doped p-type Si(111) substrate, a built-in p-contact is formed on the bottom side of a vertically conducting device. The top side of the device can be the n-contact, which is more easily fabricated than a p-contact. Using this method of contact fabrication, not only more dies per wafer can be achieved because of the smaller size of the vertically conducting device, but the ease with which the p-contact is formed contributes greatly to cost reduction in the device fabrication process.

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