Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs

Shawn M. O'Rourke, Sameer M. Venugopal, Gregory Raupp, David Allee, Scott Ageno, Edward J. Bawolek, Douglas E. Loy, Jann P. Kaminski, Curt Moyer, Barry O'Brien, Ke Long, Michael Marrs, Dirk Bottesch, Jeff Dailey, Jovan Trujillo, Rita Cordova, Mark Richards, Daniel Toy, Nicholas Colaneri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

A low temperature, 180°C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm 2/V-sec, median drive currents of 26.2 μA and low defectivity.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - SID International Symposium
Pages422-424
Number of pages3
Volume39
Edition1
StatePublished - 2008
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: May 20 2008May 21 2008

Other

Other2008 SID International Symposium
CountryUnited States
CityLos Angeles, CA
Period5/20/085/21/08

ASJC Scopus subject areas

  • Engineering(all)

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    O'Rourke, S. M., Venugopal, S. M., Raupp, G., Allee, D., Ageno, S., Bawolek, E. J., Loy, D. E., Kaminski, J. P., Moyer, C., O'Brien, B., Long, K., Marrs, M., Bottesch, D., Dailey, J., Trujillo, J., Cordova, R., Richards, M., Toy, D., & Colaneri, N. (2008). Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs. In Digest of Technical Papers - SID International Symposium (1 ed., Vol. 39, pp. 422-424)