Active Electronic Devices Based on Gallium Nitride and Its Alloys Grown on Silicon Substrates With Buffer Layers of SiCAIN

John Kouvetakis (Inventor)

Research output: Patent

Abstract

Active electronic devices based on GaN, AlGaN, and InGaN, can be fabricated on Si substrates via buffer layers of SiCAlN. The SiCAlN buffer layers are epitaxially grown directly on Si(111) substrates without removal of the native oxide on the Si(111) surface. The SiCAlN buffer layer then provides a good lattice match to the Group III nitride layers for their growth, thereby minimizing the formation of dislocations and other defects in the active nitride layers for electronic applications. The nitride-based electronic devices include HBT, HFET, LED, and laser diode (LD).
Original languageEnglish (US)
StatePublished - Sep 10 2002

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gallium nitrides
buffers
silicon
nitrides
electronics
diodes
light emitting diodes
semiconductor lasers
oxides
defects

Cite this

@misc{d0d9cf487923481f8053b740506bc918,
title = "Active Electronic Devices Based on Gallium Nitride and Its Alloys Grown on Silicon Substrates With Buffer Layers of SiCAIN",
abstract = "Active electronic devices based on GaN, AlGaN, and InGaN, can be fabricated on Si substrates via buffer layers of SiCAlN. The SiCAlN buffer layers are epitaxially grown directly on Si(111) substrates without removal of the native oxide on the Si(111) surface. The SiCAlN buffer layer then provides a good lattice match to the Group III nitride layers for their growth, thereby minimizing the formation of dislocations and other defects in the active nitride layers for electronic applications. The nitride-based electronic devices include HBT, HFET, LED, and laser diode (LD).",
author = "John Kouvetakis",
year = "2002",
month = "9",
day = "10",
language = "English (US)",
type = "Patent",

}

TY - PAT

T1 - Active Electronic Devices Based on Gallium Nitride and Its Alloys Grown on Silicon Substrates With Buffer Layers of SiCAIN

AU - Kouvetakis, John

PY - 2002/9/10

Y1 - 2002/9/10

N2 - Active electronic devices based on GaN, AlGaN, and InGaN, can be fabricated on Si substrates via buffer layers of SiCAlN. The SiCAlN buffer layers are epitaxially grown directly on Si(111) substrates without removal of the native oxide on the Si(111) surface. The SiCAlN buffer layer then provides a good lattice match to the Group III nitride layers for their growth, thereby minimizing the formation of dislocations and other defects in the active nitride layers for electronic applications. The nitride-based electronic devices include HBT, HFET, LED, and laser diode (LD).

AB - Active electronic devices based on GaN, AlGaN, and InGaN, can be fabricated on Si substrates via buffer layers of SiCAlN. The SiCAlN buffer layers are epitaxially grown directly on Si(111) substrates without removal of the native oxide on the Si(111) surface. The SiCAlN buffer layer then provides a good lattice match to the Group III nitride layers for their growth, thereby minimizing the formation of dislocations and other defects in the active nitride layers for electronic applications. The nitride-based electronic devices include HBT, HFET, LED, and laser diode (LD).

M3 - Patent

ER -