Active electronic devices based on GaN, AlGaN, and InGaN, can be fabricated on Si substrates via buffer layers of SiCAlN. The SiCAlN buffer layers are epitaxially grown directly on Si(111) substrates without removal of the native oxide on the Si(111) surface. The SiCAlN buffer layer then provides a good lattice match to the Group III nitride layers for their growth, thereby minimizing the formation of dislocations and other defects in the active nitride layers for electronic applications. The nitride-based electronic devices include HBT, HFET, LED, and laser diode (LD).
|Original language||English (US)|
|State||Published - Sep 10 2002|