Acoustic phonon scattering in silicon quantum dots

Manfred Dür, Allen D. Gunther, Dragica Vasileska, Stephen Goodnick

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Intravalley acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a (100) surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO2 interface is modelled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-acoustic-phonon interaction strongly affects the scattering rate and the average scattering angle. The calculated transition rate of electrons from the first excited state to the ground state shows a strong dependence on spatial confinement and lattice temperature, with the longitudinal phonon mode giving the main contribution to the total rate.

Original languageEnglish (US)
Pages (from-to)142-146
Number of pages5
JournalNanotechnology
Volume10
Issue number2
DOIs
StatePublished - Jun 1 1999

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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