Achieving atomic resolution

John Spence

doi:10.1016/S1369-7021(02)05328-2

Achieving atomic resolution

John Spence

Physics

Research output: Contribution to journal › Review article › peer-review

3 Scopus citations

Abstract

Different aspects and uses of high resolution electron microscopy (HREM) are reviewed to study defect structures in the bulk when atomic resolution is needed. HREM has been used to determine the atomic structure of line and planar defects and interfaces. The importance of intergranular phases in creamics and at metal-ceramic interfaces has been realized. The SrTiO₃/BaTiO ₃ interfaces have been analyzed by using HREM. MBE-grown Nb-sapphire interface structure can be determined by HREM. The lattice image of GaAs, recorded at 200 kV using a Philips HREM instrument fitted with spherical aberration corrector is also shown. HREM can solved materials science problems by providing an explanation for bulk properties at the atomic level.

Original language	English (US)
Pages (from-to)	20-33
Number of pages	14
Journal	Materials Today
Volume	5
Issue number	3
DOIs	https://doi.org/10.1016/S1369-7021(02)05328-2
State	Published - 2002

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-7021(02)05328-2

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title = "Achieving atomic resolution",

abstract = "Different aspects and uses of high resolution electron microscopy (HREM) are reviewed to study defect structures in the bulk when atomic resolution is needed. HREM has been used to determine the atomic structure of line and planar defects and interfaces. The importance of intergranular phases in creamics and at metal-ceramic interfaces has been realized. The SrTiO3/BaTiO 3 interfaces have been analyzed by using HREM. MBE-grown Nb-sapphire interface structure can be determined by HREM. The lattice image of GaAs, recorded at 200 kV using a Philips HREM instrument fitted with spherical aberration corrector is also shown. HREM can solved materials science problems by providing an explanation for bulk properties at the atomic level.",

author = "John Spence",

note = "Funding Information: This work was supported by NSF award DMR9814055.",

year = "2002",

doi = "10.1016/S1369-7021(02)05328-2",

language = "English (US)",

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pages = "20--33",

journal = "Materials Today",

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number = "3",

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T1 - Achieving atomic resolution

AU - Spence, John

N1 - Funding Information: This work was supported by NSF award DMR9814055.

PY - 2002

Y1 - 2002

N2 - Different aspects and uses of high resolution electron microscopy (HREM) are reviewed to study defect structures in the bulk when atomic resolution is needed. HREM has been used to determine the atomic structure of line and planar defects and interfaces. The importance of intergranular phases in creamics and at metal-ceramic interfaces has been realized. The SrTiO3/BaTiO 3 interfaces have been analyzed by using HREM. MBE-grown Nb-sapphire interface structure can be determined by HREM. The lattice image of GaAs, recorded at 200 kV using a Philips HREM instrument fitted with spherical aberration corrector is also shown. HREM can solved materials science problems by providing an explanation for bulk properties at the atomic level.

AB - Different aspects and uses of high resolution electron microscopy (HREM) are reviewed to study defect structures in the bulk when atomic resolution is needed. HREM has been used to determine the atomic structure of line and planar defects and interfaces. The importance of intergranular phases in creamics and at metal-ceramic interfaces has been realized. The SrTiO3/BaTiO 3 interfaces have been analyzed by using HREM. MBE-grown Nb-sapphire interface structure can be determined by HREM. The lattice image of GaAs, recorded at 200 kV using a Philips HREM instrument fitted with spherical aberration corrector is also shown. HREM can solved materials science problems by providing an explanation for bulk properties at the atomic level.

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DO - 10.1016/S1369-7021(02)05328-2

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AN - SCOPUS:15844429419

SN - 1369-7021

VL - 5

SP - 20

EP - 33

JO - Materials Today

JF - Materials Today

IS - 3

ER -

Achieving atomic resolution

Abstract

ASJC Scopus subject areas

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