Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions

C. Heitzinger, Christian Ringhofer, S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron-electron and electron-impurity interactions play an important role in ultra-small MOSFETs. Previous simulation approaches (particle-mesh and particle-particle particle-mesh methods) were found to be very time consuming. Here a fast multi-pole method is used instead which was found to yield physically correct results in bulk mobility and device simulations within significantly decreased simulation times. We describe the simulation method and compare the electron mobility for several doping concentrations as obtained experimentally and by five simulation methods.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsM. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J.P. Leburton, D.J. Lockwood, S. Seal, A. Stella
Pages165-179
Number of pages15
VolumePV 2004-13
StatePublished - 2005
EventNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Heitzinger, C., Ringhofer, C., Ahmed, S., & Vasileska, D. (2005). Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions. In M. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J. P. Leburton, D. J. Lockwood, S. Seal, & A. Stella (Eds.), Proceedings - Electrochemical Society (Vol. PV 2004-13, pp. 165-179)