Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions

C. Heitzinger; Christian Ringhofer; S. Ahmed; Dragica Vasileska

Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions

C. Heitzinger, Christian Ringhofer, S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electron-electron and electron-impurity interactions play an important role in ultra-small MOSFETs. Previous simulation approaches (particle-mesh and particle-particle particle-mesh methods) were found to be very time consuming. Here a fast multi-pole method is used instead which was found to yield physically correct results in bulk mobility and device simulations within significantly decreased simulation times. We describe the simulation method and compare the electron mobility for several doping concentrations as obtained experimentally and by five simulation methods.

Original language	English (US)
Title of host publication	Proceedings - Electrochemical Society
Editors	M. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J.P. Leburton, D.J. Lockwood, S. Seal, A. Stella
Pages	165-179
Number of pages	15
Volume	PV 2004-13
State	Published - 2005
Event	Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

ASJC Scopus subject areas

Engineering(all)

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Heitzinger, C., Ringhofer, C., Ahmed, S., & Vasileska, D. (2005). Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions. In M. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J. P. Leburton, D. J. Lockwood, S. Seal, & A. Stella (Eds.), Proceedings - Electrochemical Society (Vol. PV 2004-13, pp. 165-179)

Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions. / Heitzinger, C.; Ringhofer, Christian; Ahmed, S. et al.

Proceedings - Electrochemical Society. ed. / M. Cahay; M. Urquidi-Macdonald; S. Bandyopadhyay; P. Guo; H. Hasegawa; N. Koshida; J.P. Leburton; D.J. Lockwood; S. Seal; A. Stella. Vol. PV 2004-13 2005. p. 165-179.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Heitzinger, C, Ringhofer, C, Ahmed, S & Vasileska, D 2005, Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions. in M Cahay, M Urquidi-Macdonald, S Bandyopadhyay, P Guo, H Hasegawa, N Koshida, JP Leburton, DJ Lockwood, S Seal & A Stella (eds), Proceedings - Electrochemical Society. vol. PV 2004-13, pp. 165-179, Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium, Honolulu, HI, United States, 10/3/04.

Heitzinger C, Ringhofer C, Ahmed S, Vasileska D. Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions. In Cahay M, Urquidi-Macdonald M, Bandyopadhyay S, Guo P, Hasegawa H, Koshida N, Leburton JP, Lockwood DJ, Seal S, Stella A, editors, Proceedings - Electrochemical Society. Vol. PV 2004-13. 2005. p. 165-179

Heitzinger, C. ; Ringhofer, Christian ; Ahmed, S. et al. / Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions. Proceedings - Electrochemical Society. editor / M. Cahay ; M. Urquidi-Macdonald ; S. Bandyopadhyay ; P. Guo ; H. Hasegawa ; N. Koshida ; J.P. Leburton ; D.J. Lockwood ; S. Seal ; A. Stella. Vol. PV 2004-13 2005. pp. 165-179

@inproceedings{03ca3e0c5ddd4ac0a23aec7e58e2b915,

title = "Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions",

abstract = "Electron-electron and electron-impurity interactions play an important role in ultra-small MOSFETs. Previous simulation approaches (particle-mesh and particle-particle particle-mesh methods) were found to be very time consuming. Here a fast multi-pole method is used instead which was found to yield physically correct results in bulk mobility and device simulations within significantly decreased simulation times. We describe the simulation method and compare the electron mobility for several doping concentrations as obtained experimentally and by five simulation methods.",

author = "C. Heitzinger and Christian Ringhofer and S. Ahmed and Dragica Vasileska",

year = "2005",

language = "English (US)",

volume = "PV 2004-13",

pages = "165--179",

editor = "M. Cahay and M. Urquidi-Macdonald and S. Bandyopadhyay and P. Guo and H. Hasegawa and N. Koshida and J.P. Leburton and D.J. Lockwood and S. Seal and A. Stella",

booktitle = "Proceedings - Electrochemical Society",

note = "Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - GEN

T1 - Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions

AU - Heitzinger, C.

AU - Ringhofer, Christian

AU - Ahmed, S.

AU - Vasileska, Dragica

PY - 2005

Y1 - 2005

N2 - Electron-electron and electron-impurity interactions play an important role in ultra-small MOSFETs. Previous simulation approaches (particle-mesh and particle-particle particle-mesh methods) were found to be very time consuming. Here a fast multi-pole method is used instead which was found to yield physically correct results in bulk mobility and device simulations within significantly decreased simulation times. We describe the simulation method and compare the electron mobility for several doping concentrations as obtained experimentally and by five simulation methods.

AB - Electron-electron and electron-impurity interactions play an important role in ultra-small MOSFETs. Previous simulation approaches (particle-mesh and particle-particle particle-mesh methods) were found to be very time consuming. Here a fast multi-pole method is used instead which was found to yield physically correct results in bulk mobility and device simulations within significantly decreased simulation times. We describe the simulation method and compare the electron mobility for several doping concentrations as obtained experimentally and by five simulation methods.

UR - http://www.scopus.com/inward/record.url?scp=28544436714&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28544436714&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:28544436714

VL - PV 2004-13

SP - 165

EP - 179

BT - Proceedings - Electrochemical Society

A2 - Cahay, M.

A2 - Urquidi-Macdonald, M.

A2 - Bandyopadhyay, S.

A2 - Guo, P.

A2 - Hasegawa, H.

A2 - Koshida, N.

A2 - Leburton, J.P.

A2 - Lockwood, D.J.

A2 - Seal, S.

A2 - Stella, A.

T2 - Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions

Abstract

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ASJC Scopus subject areas

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