Abstract
A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent VT for traps located near the source of the MOSFET device with 32-nm effective channel length.
Original language | English (US) |
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Article number | 5930325 |
Pages (from-to) | 1044-1046 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2011 |
Keywords
- Random dopant fluctuations (RDFs)
- random interface trap
- short-range Coulomb interaction
- threshold voltage variation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering