Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants

Nabil Ashraf, Dragica Vasileska, Gilson Wirth, P. Srinivasan

Research output: Contribution to journalReview article

11 Scopus citations


A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent VT for traps located near the source of the MOSFET device with 32-nm effective channel length.

Original languageEnglish (US)
Article number5930325
Pages (from-to)1044-1046
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 1 2011



  • Random dopant fluctuations (RDFs)
  • random interface trap
  • short-range Coulomb interaction
  • threshold voltage variation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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