Abstract

A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent VT for traps located near the source of the MOSFET device with 32-nm effective channel length.

Original languageEnglish (US)
Article number5930325
Pages (from-to)1044-1046
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
StatePublished - Aug 2011

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MOSFET devices
Threshold voltage
Analytical models
Doping (additives)

Keywords

  • Random dopant fluctuations (RDFs)
  • random interface trap
  • short-range Coulomb interaction
  • threshold voltage variation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants. / Ashraf, Nabil; Vasileska, Dragica; Wirth, Gilson; Srinivasan, P.

In: IEEE Electron Device Letters, Vol. 32, No. 8, 5930325, 08.2011, p. 1044-1046.

Research output: Contribution to journalArticle

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