AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory

Shimeng Yu, Rakesh Jeyasingh, Yi Wu, H. S. Philip Wong

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Impedance spectroscopy and AC conductance measurement were performed on HfO x based resistive switching memory. The f β-like AC conductance is observable above a corner frequency for high resistance state (HRS). The index β is about 2 and is independent of DC bias or resistance value of different HRSs, suggesting that electron hopping between the nearest neighbor traps within the conductive filaments (CFs) is responsible for the measured AC conductance. The corner frequency shows up in a lower frequency regime for a higher HRS, indicating that a larger tunneling gap is formed between the electrode and the residual CFs.

Original languageEnglish (US)
Article number232105
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
StatePublished - Dec 5 2011
Externally publishedYes

Fingerprint

alternating current
conduction
high resistance
filaments
direct current
traps
impedance
low frequencies
electrodes
spectroscopy
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory. / Yu, Shimeng; Jeyasingh, Rakesh; Wu, Yi; Philip Wong, H. S.

In: Applied Physics Letters, Vol. 99, No. 23, 232105, 05.12.2011.

Research output: Contribution to journalArticle

Yu, Shimeng ; Jeyasingh, Rakesh ; Wu, Yi ; Philip Wong, H. S. / AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory. In: Applied Physics Letters. 2011 ; Vol. 99, No. 23.
@article{64821e0d33174045b4d8e16821098f93,
title = "AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory",
abstract = "Impedance spectroscopy and AC conductance measurement were performed on HfO x based resistive switching memory. The f β-like AC conductance is observable above a corner frequency for high resistance state (HRS). The index β is about 2 and is independent of DC bias or resistance value of different HRSs, suggesting that electron hopping between the nearest neighbor traps within the conductive filaments (CFs) is responsible for the measured AC conductance. The corner frequency shows up in a lower frequency regime for a higher HRS, indicating that a larger tunneling gap is formed between the electrode and the residual CFs.",
author = "Shimeng Yu and Rakesh Jeyasingh and Yi Wu and {Philip Wong}, {H. S.}",
year = "2011",
month = "12",
day = "5",
doi = "10.1063/1.3663968",
language = "English (US)",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory

AU - Yu, Shimeng

AU - Jeyasingh, Rakesh

AU - Wu, Yi

AU - Philip Wong, H. S.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - Impedance spectroscopy and AC conductance measurement were performed on HfO x based resistive switching memory. The f β-like AC conductance is observable above a corner frequency for high resistance state (HRS). The index β is about 2 and is independent of DC bias or resistance value of different HRSs, suggesting that electron hopping between the nearest neighbor traps within the conductive filaments (CFs) is responsible for the measured AC conductance. The corner frequency shows up in a lower frequency regime for a higher HRS, indicating that a larger tunneling gap is formed between the electrode and the residual CFs.

AB - Impedance spectroscopy and AC conductance measurement were performed on HfO x based resistive switching memory. The f β-like AC conductance is observable above a corner frequency for high resistance state (HRS). The index β is about 2 and is independent of DC bias or resistance value of different HRSs, suggesting that electron hopping between the nearest neighbor traps within the conductive filaments (CFs) is responsible for the measured AC conductance. The corner frequency shows up in a lower frequency regime for a higher HRS, indicating that a larger tunneling gap is formed between the electrode and the residual CFs.

UR - http://www.scopus.com/inward/record.url?scp=83455172683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83455172683&partnerID=8YFLogxK

U2 - 10.1063/1.3663968

DO - 10.1063/1.3663968

M3 - Article

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 232105

ER -