@article{64821e0d33174045b4d8e16821098f93,
title = "AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory",
abstract = "Impedance spectroscopy and AC conductance measurement were performed on HfO x based resistive switching memory. The f β-like AC conductance is observable above a corner frequency for high resistance state (HRS). The index β is about 2 and is independent of DC bias or resistance value of different HRSs, suggesting that electron hopping between the nearest neighbor traps within the conductive filaments (CFs) is responsible for the measured AC conductance. The corner frequency shows up in a lower frequency regime for a higher HRS, indicating that a larger tunneling gap is formed between the electrode and the residual CFs.",
author = "Shimeng Yu and Rakesh Jeyasingh and Yi Wu and {Philip Wong}, {H. S.}",
note = "Funding Information: We thank Yang Chai, J. Provine, and Cambridge Nanotech for the device fabrication, and Ze Yuan for the measurement set-up. This work is supported in part by the National Science Foundation (NSF ECCS 0950305), the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale (CPN), the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), and the MSD and C2S2 Centers, two of six research centers funded under the Focus Center Research Program (FCRP), an SRC subsidiary. S. Yu is additionally supported by the Stanford Graduate Fellowship.",
year = "2011",
month = dec,
day = "5",
doi = "10.1063/1.3663968",
language = "English (US)",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",
}