AC conductance measurement and analysis of the conduction processes in HfO x based resistive switching memory

Shimeng Yu, Rakesh Jeyasingh, Yi Wu, H. S. Philip Wong

Research output: Contribution to journalArticle

29 Scopus citations


Impedance spectroscopy and AC conductance measurement were performed on HfO x based resistive switching memory. The f β-like AC conductance is observable above a corner frequency for high resistance state (HRS). The index β is about 2 and is independent of DC bias or resistance value of different HRSs, suggesting that electron hopping between the nearest neighbor traps within the conductive filaments (CFs) is responsible for the measured AC conductance. The corner frequency shows up in a lower frequency regime for a higher HRS, indicating that a larger tunneling gap is formed between the electrode and the residual CFs.

Original languageEnglish (US)
Article number232105
JournalApplied Physics Letters
Issue number23
StatePublished - Dec 5 2011


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this