@article{788c116c5dae4a768795b141b16fbfd0,
title = "Absorption edge characteristics of GaAs, GaSb, InAs, and InSb",
abstract = "The physical characteristics of the fundamental absorption edge of semi-insulating GaAs and unintentionally doped GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed to describe the key characteristics of the absorption edge. Among these parameters are the bandgap energy, the characteristic energy of the Urbach tail, and the absorption coefficient at the bandgap energy. The results indicate that the Coulomb interaction strongly influences the shape of the band edge with progressively less influence as the bandgap energy decreases. The energy dependence of the optical transition strength is observed to be nearly constant in narrow bandgap InSb.",
author = "Schaefer, {S. T.} and S. Gao and Webster, {P. T.} and Kosireddy, {R. R.} and Johnson, {S. R.}",
note = "Funding Information: The authors acknowledge financial support through research sponsored by the Air Force Research Laboratory under Agreement No. FA9453-19-2-0004 and the Shandong Provincial Natural Science Foundation (Grant Nos. ZR2014AL012 and ZR2017MA040). The authors also acknowledge use of facilities in the Eyring Materials Center at the Arizona State University. Funding Information: The authors acknowledge financial support through research sponsored by the Air Force Research Laboratory59 under Agreement No. FA9453-19-2-0004 and the Shandong Provincial Natural Science Foundation (Grant Nos. ZR2014AL012 and ZR2017MA040). The authors also acknowledge use of facilities in the Eyring Materials Center at the Arizona State University. Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = apr,
day = "30",
doi = "10.1063/5.0003001",
language = "English (US)",
volume = "127",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "16",
}