Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets

Som N. Dahal, Keun Yong Ban, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Solar cells with quantum dot nanostructure absorbing medium have a potential to overcome single junction limit and achieve the solar energy conversion efficiency as high as 63%. The confined energy states in quantum dots can mediate the absorption of photons with energy lower than the band gap of the barrier material. Closely spaced array of quantum dots (QDs) can form a mini band due to electronic coupling of the confined states among the neighboring dots. Absorption properties of the quantum dot nanostructaures are different from that of a bulk material. For the detailed balance efficiency calculations, the absorption coefficients of the QD nanostructures are required for realistic QD structures. After finding out material combinations with negligible valence band offset for quantum dot intermediate band solar cells(QDIBSCs), present work is focused on the calculation of absorption coefficients of QD arrays. The confined electronic states are calculated with the effective mass theory for single and coupled quantum dots. The electronic coupling of the ground states of an array of quantum dots is calculated for negligible valence band offset material combinations (especially InAs dots in GaAs(0.84)Sb (0.16) matrix grown on [001] GaAs substrate). The intermediate bandwidth vs the veretical interdot separation is presented. For some suitable interedot separation, the absorption coefficients are calculated for valence band to intermediate band, Intermediate band to conduction band transitions.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1797-1799
Number of pages3
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Valence bands
Semiconductor quantum dots
Nanostructures
Solar cells
Electronic states
Electron transitions
Conduction bands
Energy conversion
Solar energy
Electron energy levels
Ground state
Conversion efficiency
Energy gap
Photons
Bandwidth
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Dahal, S. N., Ban, K. Y., & Honsberg, C. (2010). Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1797-1799). [5615908] https://doi.org/10.1109/PVSC.2010.5615908

Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets. / Dahal, Som N.; Ban, Keun Yong; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 1797-1799 5615908.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dahal, SN, Ban, KY & Honsberg, C 2010, Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5615908, pp. 1797-1799, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5615908
Dahal SN, Ban KY, Honsberg C. Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 1797-1799. 5615908 https://doi.org/10.1109/PVSC.2010.5615908
Dahal, Som N. ; Ban, Keun Yong ; Honsberg, Christiana. / Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 1797-1799
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