Absolute measurement of normalized thickness, t/λi, from off-axis electron holography

Martha McCartney, M. Gajdardziska-Josifovska

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

A simple method is described for determination of the quantity t/λi from off-axis electron holograms, where t is the local thickness and λi is the mean-free-path for inelastic scattering of high energy electrons. The method uses the energy-filtered amplitude reconstructed from a hologram and, when applied to samples with well characterized geometry, allows measurement of the inelastic mean-free-path. Measured values of 71 ± 5 nm for MgO and 92 ± 7 nm for Si for 100 keV beam energy compare favorably with calculated and experimental values from electron-energy-loss spectroscopy. Differences between the two techniques for determining t/λi and the utility of the holographic method are briefly discussed.

Original languageEnglish (US)
Pages (from-to)283-289
Number of pages7
JournalUltramicroscopy
Volume53
Issue number3
DOIs
StatePublished - 1994

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Electron holography
Holograms
mean free path
holography
Inelastic scattering
Electrons
Electron energy loss spectroscopy
high energy electrons
inelastic scattering
electrons
energy dissipation
electron energy
Geometry
energy
geometry
spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

Absolute measurement of normalized thickness, t/λi, from off-axis electron holography. / McCartney, Martha; Gajdardziska-Josifovska, M.

In: Ultramicroscopy, Vol. 53, No. 3, 1994, p. 283-289.

Research output: Contribution to journalArticle

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