Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

P. M. Voyles; J. E. Gerbi; M. M.J. Treacy; J. M. Gibson; J. R. Abelson

doi:10.1103/PhysRevLett.86.5514

Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

P. M. Voyles, J. E. Gerbi, M. M.J. Treacy, J. M. Gibson, J. R. Abelson

Research output: Contribution to journal › Article › peer-review

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Abstract

Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

Original language	English (US)
Pages (from-to)	5514-5517
Number of pages	4
Journal	Physical Review Letters
Volume	86
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevLett.86.5514
State	Published - Jun 11 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.86.5514

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title = "Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature",

abstract = "Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.",

author = "Voyles, {P. M.} and Gerbi, {J. E.} and Treacy, {M. M.J.} and Gibson, {J. M.} and Abelson, {J. R.}",

year = "2001",

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AU - Voyles, P. M.

AU - Gerbi, J. E.

AU - Treacy, M. M.J.

AU - Gibson, J. M.

AU - Abelson, J. R.

PY - 2001/6/11

Y1 - 2001/6/11

N2 - Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

AB - Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

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Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

Abstract

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