Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

P. M. Voyles, J. E. Gerbi, Michael Treacy, J. M. Gibson, J. R. Abelson

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

Original languageEnglish (US)
Pages (from-to)5514-5517
Number of pages4
JournalPhysical Review Letters
Volume86
Issue number24
DOIs
StatePublished - Jun 11 2001
Externally publishedYes

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amorphous silicon
silicon
silicon films
electron microscopy
disorders
temperature
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature. / Voyles, P. M.; Gerbi, J. E.; Treacy, Michael; Gibson, J. M.; Abelson, J. R.

In: Physical Review Letters, Vol. 86, No. 24, 11.06.2001, p. 5514-5517.

Research output: Contribution to journalArticle

Voyles, P. M. ; Gerbi, J. E. ; Treacy, Michael ; Gibson, J. M. ; Abelson, J. R. / Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature. In: Physical Review Letters. 2001 ; Vol. 86, No. 24. pp. 5514-5517.
@article{b657169832fe43e1bbd027d9d82f554b,
title = "Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature",
abstract = "Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.",
author = "Voyles, {P. M.} and Gerbi, {J. E.} and Michael Treacy and Gibson, {J. M.} and Abelson, {J. R.}",
year = "2001",
month = "6",
day = "11",
doi = "10.1103/PhysRevLett.86.5514",
language = "English (US)",
volume = "86",
pages = "5514--5517",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "24",

}

TY - JOUR

T1 - Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

AU - Voyles, P. M.

AU - Gerbi, J. E.

AU - Treacy, Michael

AU - Gibson, J. M.

AU - Abelson, J. R.

PY - 2001/6/11

Y1 - 2001/6/11

N2 - Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

AB - Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

UR - http://www.scopus.com/inward/record.url?scp=0035844582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035844582&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.86.5514

DO - 10.1103/PhysRevLett.86.5514

M3 - Article

C2 - 11415289

AN - SCOPUS:0035844582

VL - 86

SP - 5514

EP - 5517

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 24

ER -