Abnormal electrical resistivity in γ-TiAl thin films deposited by magnetron sputtering

Terry Alford, K. S. Gadre, H. C. Kim, S. C. Deevi

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A study is performed on abnormal electrical resistivity in γ-TiAl thin films. The magnetron sputtering technique is used for the purpose. The γ-TiAl phase formation, composition and thermal stability in vacuum are confirmed by Rutherford backscattering spectrometry and X-ray diffractometry.

Original languageEnglish (US)
Pages (from-to)455-457
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number3
DOIs
StatePublished - Jul 21 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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