TY - JOUR
T1 - Abnormal band bowing effects in phase instability crossover region of GaSe1-x Te x nanomaterials /639/301 /639/301/357/1018 /639/925/357/1018 /123 /128 /119 /147/143 /147/135 /140/133 article
AU - Cai, Hui
AU - Chen, Bin
AU - Blei, Mark
AU - Chang, Lan-Yun
AU - Wu, Kedi
AU - Zhuang, Houlong
AU - Tongay, Sefaattin
N1 - Funding Information:
This work was supported by the Arizona State University seeding program. We gratefully acknowledge the use of facilities at the LeRoy Eyring Center for Solid State Science at Arizona State University. We acknowledge the use of John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. S.T. acknowledges funding from NSF DMR-1552220 and ARO STIR program for New-class of IR 2D semiconductor Alloys. This research also used computational resources of the Texas Advanced Computing Center under contract No. TG-DMR170070.
Publisher Copyright:
© 2018 The Author(s).
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Akin to the enormous number of discoveries made through traditional semiconductor alloys, alloying selected 2D semiconductors enables engineering of their electronic structure for a wide range of new applications. 2D alloys have been demonstrated when two components crystallized in the same phase, and their bandgaps displayed predictable monotonic variation. By stabilizing previously unobserved compositions and phases of GaSe1-x Te x at nanoscales on GaAs(111), we demonstrate abnormal band bowing effects and phase instability region when components crystallize in different phases. Advanced microscopy and spectroscopy measurements show as tellurium is alloyed into GaSe, nanostructures undergo hexagonal to monoclinic and isotropic to anisotropic transition. There exists an instability region (0.56 < x < 0.67) where both phases compete and coexist, and two different bandgap values can be found at the same composition leading to anomalous band bowing effects. Results highlight unique alloying effects, not existing in single-phase alloys, and phase engineering routes for potential applications in photonic and electronics.
AB - Akin to the enormous number of discoveries made through traditional semiconductor alloys, alloying selected 2D semiconductors enables engineering of their electronic structure for a wide range of new applications. 2D alloys have been demonstrated when two components crystallized in the same phase, and their bandgaps displayed predictable monotonic variation. By stabilizing previously unobserved compositions and phases of GaSe1-x Te x at nanoscales on GaAs(111), we demonstrate abnormal band bowing effects and phase instability region when components crystallize in different phases. Advanced microscopy and spectroscopy measurements show as tellurium is alloyed into GaSe, nanostructures undergo hexagonal to monoclinic and isotropic to anisotropic transition. There exists an instability region (0.56 < x < 0.67) where both phases compete and coexist, and two different bandgap values can be found at the same composition leading to anomalous band bowing effects. Results highlight unique alloying effects, not existing in single-phase alloys, and phase engineering routes for potential applications in photonic and electronics.
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U2 - 10.1038/s41467-018-04328-z
DO - 10.1038/s41467-018-04328-z
M3 - Article
C2 - 29765042
AN - SCOPUS:85047108773
SN - 2041-1723
VL - 9
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 1927
ER -