Ab initio studies of Cs on GaAs (100) and (110) surfaces

Siddharth Karkare, Laurent Boulet, Arunima Singh, Richard Hennig, Ivan Bazarov

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

GaAs with an atomic monolayer of Cs is one of the best known photoemissive materials. The results of density functional theory calculations of Cs adsorption on the GaAs(100)-(4×2) gallium-terminated reconstructed surface and the GaAs(110) surface are presented in this work. Coverage of up to 4 Cs atoms/nm2 on GaAs surfaces has been studied to predict the work-function reduction and adsorption energies accurately. The high mobility of Cs atoms on the (110) surface allows formation of ordered structures, whereas the low mobility of Cs of the (100) surface causes amorphous growth.

Original languageEnglish (US)
Article number035408
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number3
DOIs
StatePublished - Jan 12 2015
Externally publishedYes

Fingerprint

Adsorption
Atoms
Gallium
adsorption
gallium
Density functional theory
atoms
Monolayers
gallium arsenide
density functional theory
causes
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ab initio studies of Cs on GaAs (100) and (110) surfaces. / Karkare, Siddharth; Boulet, Laurent; Singh, Arunima; Hennig, Richard; Bazarov, Ivan.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 3, 035408, 12.01.2015.

Research output: Contribution to journalArticle

@article{43ed1cda365645efb506bc319ae49415,
title = "Ab initio studies of Cs on GaAs (100) and (110) surfaces",
abstract = "GaAs with an atomic monolayer of Cs is one of the best known photoemissive materials. The results of density functional theory calculations of Cs adsorption on the GaAs(100)-(4×2) gallium-terminated reconstructed surface and the GaAs(110) surface are presented in this work. Coverage of up to 4 Cs atoms/nm2 on GaAs surfaces has been studied to predict the work-function reduction and adsorption energies accurately. The high mobility of Cs atoms on the (110) surface allows formation of ordered structures, whereas the low mobility of Cs of the (100) surface causes amorphous growth.",
author = "Siddharth Karkare and Laurent Boulet and Arunima Singh and Richard Hennig and Ivan Bazarov",
year = "2015",
month = "1",
day = "12",
doi = "10.1103/PhysRevB.91.035408",
language = "English (US)",
volume = "91",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Ab initio studies of Cs on GaAs (100) and (110) surfaces

AU - Karkare, Siddharth

AU - Boulet, Laurent

AU - Singh, Arunima

AU - Hennig, Richard

AU - Bazarov, Ivan

PY - 2015/1/12

Y1 - 2015/1/12

N2 - GaAs with an atomic monolayer of Cs is one of the best known photoemissive materials. The results of density functional theory calculations of Cs adsorption on the GaAs(100)-(4×2) gallium-terminated reconstructed surface and the GaAs(110) surface are presented in this work. Coverage of up to 4 Cs atoms/nm2 on GaAs surfaces has been studied to predict the work-function reduction and adsorption energies accurately. The high mobility of Cs atoms on the (110) surface allows formation of ordered structures, whereas the low mobility of Cs of the (100) surface causes amorphous growth.

AB - GaAs with an atomic monolayer of Cs is one of the best known photoemissive materials. The results of density functional theory calculations of Cs adsorption on the GaAs(100)-(4×2) gallium-terminated reconstructed surface and the GaAs(110) surface are presented in this work. Coverage of up to 4 Cs atoms/nm2 on GaAs surfaces has been studied to predict the work-function reduction and adsorption energies accurately. The high mobility of Cs atoms on the (110) surface allows formation of ordered structures, whereas the low mobility of Cs of the (100) surface causes amorphous growth.

UR - http://www.scopus.com/inward/record.url?scp=84921059334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921059334&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.91.035408

DO - 10.1103/PhysRevB.91.035408

M3 - Article

AN - SCOPUS:84921059334

VL - 91

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 3

M1 - 035408

ER -