A W-Band SiGe Transceiver with Built-in Self-Test

S. Zeinolabedinzadeh, A. C. Ulusoy, R. L. Schmid, F. Inanlou, I. Song, T. Chi, J. S. Park, H. Wang, J. D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the health of the system while in use. In addition, it facilitates on-die measurement of the transmit and receive channels to aid in characterization of the transceivers inside a large phased array system. Measurement results show a close agreement between the on-die and off-chip characterization results. The transceiver can switch from normal operation mode to BIST mode by applying a control signal. Measurement shows receiver SSB noise figure of 12 dB and P1dB of -8.5 dBm and transmitter output power of +8 dBm. The power consumption of the entire transceiver is 150 mW.

Original languageEnglish (US)
Title of host publication2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538659502
DOIs
StatePublished - May 7 2019
Externally publishedYes
Event19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019 - Orlando, United States
Duration: Jan 20 2019Jan 23 2019

Publication series

Name2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

Conference

Conference19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019
Country/TerritoryUnited States
CityOrlando
Period1/20/191/23/19

Keywords

  • BIST
  • built-in self-test
  • front-end
  • millimeter-wave
  • phased array
  • SiGe
  • W-band

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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