A V-band Differential SiGe VCO with varactor-less tuning

Saeed Zeinolabedinzadeh, Nelson E. Lourenco, M. Kamarei, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A SiGe V-band voltage-controlled oscillator (VCO) with varactor-less tuning is presented. The frequency tuning of the VCO is accomplished using the C CB capacitance of the core transistors themselves. Removing the varactors within the VCO is particularly useful for millimeter-wave applications since varactors significantly degrade the quality factor of the resonator within the VCO and consequently the phase noise. This VCO utilizes a differential cross-coupled topology. The 67 GHz VCO was implemented in a commercial 180 nm SiGe BiCMOS platform and achieves a 6.7% tuning range and 0.3 dBm differential output power. The VCO achieves 90 dBC/Hz phase noise at 1 MHz offset from the 67 GHz signal.

Original languageEnglish (US)
Title of host publication2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012
DOIs
StatePublished - Dec 12 2012
Externally publishedYes
Event2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012 - Portland, OR, United States
Duration: Sep 30 2012Oct 3 2012

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012
CountryUnited States
CityPortland, OR
Period9/30/1210/3/12

Fingerprint

Varactors
Variable frequency oscillators
Tuning
Phase noise
Millimeter waves
Resonators
Transistors
Capacitance
Topology

Keywords

  • Millimeter-Wave
  • RF circuits
  • Silicon bipolar/BiCMOS process technology
  • Tuning range
  • VCO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zeinolabedinzadeh, S., Lourenco, N. E., Kamarei, M., & Cressler, J. D. (2012). A V-band Differential SiGe VCO with varactor-less tuning. In 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012 [6352656] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BCTM.2012.6352656

A V-band Differential SiGe VCO with varactor-less tuning. / Zeinolabedinzadeh, Saeed; Lourenco, Nelson E.; Kamarei, M.; Cressler, John D.

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012. 2012. 6352656 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zeinolabedinzadeh, S, Lourenco, NE, Kamarei, M & Cressler, JD 2012, A V-band Differential SiGe VCO with varactor-less tuning. in 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012., 6352656, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Portland, OR, United States, 9/30/12. https://doi.org/10.1109/BCTM.2012.6352656
Zeinolabedinzadeh S, Lourenco NE, Kamarei M, Cressler JD. A V-band Differential SiGe VCO with varactor-less tuning. In 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012. 2012. 6352656. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BCTM.2012.6352656
Zeinolabedinzadeh, Saeed ; Lourenco, Nelson E. ; Kamarei, M. ; Cressler, John D. / A V-band Differential SiGe VCO with varactor-less tuning. 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012. 2012. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).
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