A Universal Block of Series-Connected SiC MOSFETs Using Current-Source Gate Driver

Chunhui Liu; Zhengda Zhang; Yifu Liu; Yunpeng Si; Mengzhi Wang; Qin Lei

doi:10.1109/JESTPE.2021.3068904

A Universal Block of Series-Connected SiC MOSFETs Using Current-Source Gate Driver

Chunhui Liu, Zhengda Zhang, Yifu Liu, Yunpeng Si, Mengzhi Wang, Qin Lei

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium-voltage drive and high-power converters, this article proposes a current-source gate driver (CS-GD) for series-connected SiC MOSFETs, forming a universal block of series-connected SiC devices with the higher voltage rating. The proposed CS-GD has better gate voltage synchronization performance because of its constant gate current and novel gate driver structure. By implementing synchronized gate voltages, the snubber circuit is designed only for power loop difference and gate displacement current difference, and the snubber can be minimized or even be eliminated. The proposed block has been verified by LTSPICE simulations and multipulse test experiments under 200-kHz, 2-kV, 060-A condition using three 1.2-kV/60-A C2M0040120D SiC MOSFETs connected in series.

Original language	English (US)
Pages (from-to)	3066-3086
Number of pages	21
Journal	IEEE Journal of Emerging and Selected Topics in Power Electronics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1109/JESTPE.2021.3068904
State	Published - Jun 1 2022

Keywords

Crosstalk suppression
SiC MOSFET
self-driving
smart gate drivers

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1109/JESTPE.2021.3068904

Cite this

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title = "A Universal Block of Series-Connected SiC MOSFETs Using Current-Source Gate Driver",

abstract = "SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium-voltage drive and high-power converters, this article proposes a current-source gate driver (CS-GD) for series-connected SiC MOSFETs, forming a universal block of series-connected SiC devices with the higher voltage rating. The proposed CS-GD has better gate voltage synchronization performance because of its constant gate current and novel gate driver structure. By implementing synchronized gate voltages, the snubber circuit is designed only for power loop difference and gate displacement current difference, and the snubber can be minimized or even be eliminated. The proposed block has been verified by LTSPICE simulations and multipulse test experiments under 200-kHz, 2-kV, 060-A condition using three 1.2-kV/60-A C2M0040120D SiC MOSFETs connected in series.",

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author = "Chunhui Liu and Zhengda Zhang and Yifu Liu and Yunpeng Si and Mengzhi Wang and Qin Lei",

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T1 - A Universal Block of Series-Connected SiC MOSFETs Using Current-Source Gate Driver

AU - Liu, Chunhui

AU - Zhang, Zhengda

AU - Liu, Yifu

AU - Si, Yunpeng

AU - Wang, Mengzhi

AU - Lei, Qin

PY - 2022/6/1

Y1 - 2022/6/1

N2 - SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium-voltage drive and high-power converters, this article proposes a current-source gate driver (CS-GD) for series-connected SiC MOSFETs, forming a universal block of series-connected SiC devices with the higher voltage rating. The proposed CS-GD has better gate voltage synchronization performance because of its constant gate current and novel gate driver structure. By implementing synchronized gate voltages, the snubber circuit is designed only for power loop difference and gate displacement current difference, and the snubber can be minimized or even be eliminated. The proposed block has been verified by LTSPICE simulations and multipulse test experiments under 200-kHz, 2-kV, 060-A condition using three 1.2-kV/60-A C2M0040120D SiC MOSFETs connected in series.

AB - SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium-voltage drive and high-power converters, this article proposes a current-source gate driver (CS-GD) for series-connected SiC MOSFETs, forming a universal block of series-connected SiC devices with the higher voltage rating. The proposed CS-GD has better gate voltage synchronization performance because of its constant gate current and novel gate driver structure. By implementing synchronized gate voltages, the snubber circuit is designed only for power loop difference and gate displacement current difference, and the snubber can be minimized or even be eliminated. The proposed block has been verified by LTSPICE simulations and multipulse test experiments under 200-kHz, 2-kV, 060-A condition using three 1.2-kV/60-A C2M0040120D SiC MOSFETs connected in series.

KW - Crosstalk suppression

KW - SiC MOSFET

KW - self-driving

KW - smart gate drivers

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A Universal Block of Series-Connected SiC MOSFETs Using Current-Source Gate Driver

Abstract

Keywords

ASJC Scopus subject areas

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