A Universal Block of Series Connected SiC MOSFETs Using Current Source Gate Driver

Chunhui Liu, Zhengda Zhang, Yifu Liua, Yunpeng Si, Mengzhi Wang, Qin Lei

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium voltage drive and high-power converters, this paper proposes a current source gate driver for series connected SiC MOSFETs, forming a universal block of series connected SiC devices with higher voltage rating. Proposed current source gate driver has better gate voltage synchronization performance because of its constant gate current and novel gate driver structure. By implementing synchronized gate voltages, the snubber circuit is designed only for power loop difference, gate displacement current difference, and the snubber can be minimized or even be eliminated. The proposed block has been verified by LTSPICE simulations and multi-pulse test experiments under 200kHz, 2kV, 0~60A condition using three 1.2kV/60A C2M0040120D SiC MOSFETs connected in series.


  • Current Source Gate Driver
  • Gate drivers
  • Logic gates
  • Self-driving
  • Series Connection
  • Silicon carbide
  • Snubbers
  • Switches
  • Synchronization

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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