A unified explanation for secondary ion yields

V. R. Deline, C. A. Evans, Peter Williams

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

The pure element secondary ion yields under oxygen and cesium ion bombardment are shown to be solely dependent on a) the ionization potential (or electron affinity for negative ionization) of the sputtered atom and b) the reciprocal of the matrix sputtering yield which determines the equilibrium concentration of implanted oxygen or cesium. This unified approach accounts for the yields of C±, Si±, Ge± and Sn± from the pure elements as well as of Ga ± and As± from gallium arsenide.

Original languageEnglish (US)
Pages (from-to)578-580
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number7
DOIs
StatePublished - 1978
Externally publishedYes

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cesium ions
oxygen ions
electron affinity
cesium
ionization potentials
gallium
bombardment
ions
sputtering
ionization
oxygen
matrices
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A unified explanation for secondary ion yields. / Deline, V. R.; Evans, C. A.; Williams, Peter.

In: Applied Physics Letters, Vol. 33, No. 7, 1978, p. 578-580.

Research output: Contribution to journalArticle

Deline, V. R. ; Evans, C. A. ; Williams, Peter. / A unified explanation for secondary ion yields. In: Applied Physics Letters. 1978 ; Vol. 33, No. 7. pp. 578-580.
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