A Two-Dimensional Simulation of a Cooled, Submicrometer Indium Arsenide Schottky-Gate FET

Robert K. Reich; David K. Ferry

doi:10.1109/T-ED.1980.19987

A Two-Dimensional Simulation of a Cooled, Submicrometer Indium Arsenide Schottky-Gate FET

Robert K. Reich, David K. Ferry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.

Original language	English (US)
Pages (from-to)	1062-1065
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	27
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1980.19987
State	Published - Jun 1980
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1980.19987

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abstract = "A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.",

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AB - A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.

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A Two-Dimensional Simulation of a Cooled, Submicrometer Indium Arsenide Schottky-Gate FET

Abstract

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