A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering