Abstract
A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.
Original language | English (US) |
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Pages (from-to) | 1062-1065 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 27 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1980 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering