A Two-Dimensional Simulation of a Cooled, Submicrometer Indium Arsenide Schottky-Gate FET

Robert K. Reich, David K. Ferry

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.

Original languageEnglish (US)
Pages (from-to)1062-1065
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume27
Issue number6
DOIs
StatePublished - Jun 1980

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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