Abstract

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

Original languageEnglish (US)
Pages (from-to)1646-1650
Number of pages5
JournalNano Letters
Volume11
Issue number4
DOIs
StatePublished - Apr 13 2011

Keywords

  • Reactive ion etching
  • longitudinal heterostructure
  • photoluminescence linewidth
  • self-masking
  • semiconductor nanowires
  • top-down fabrication

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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