Abstract

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

Original languageEnglish (US)
Pages (from-to)1646-1650
Number of pages5
JournalNano Letters
Volume11
Issue number4
DOIs
StatePublished - Apr 13 2011

Fingerprint

Nanowires
Heterojunctions
nanowires
Fabrication
fabrication
masking
Linewidth
Masks
Photoluminescence
masks
wafers
wire
Wire
photoluminescence
Wavelength
wavelengths

Keywords

  • longitudinal heterostructure
  • photoluminescence linewidth
  • Reactive ion etching
  • self-masking
  • semiconductor nanowires
  • top-down fabrication

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays. / Wang, Hua; Sun, Minghua; Ding, Kang; Hill, Martin T.; Ning, Cun-Zheng.

In: Nano Letters, Vol. 11, No. 4, 13.04.2011, p. 1646-1650.

Research output: Contribution to journalArticle

Wang, Hua ; Sun, Minghua ; Ding, Kang ; Hill, Martin T. ; Ning, Cun-Zheng. / A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays. In: Nano Letters. 2011 ; Vol. 11, No. 4. pp. 1646-1650.
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AU - Ding, Kang

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