Abstract

We present a temperature compensation technique of a film bulk acoustic resonator (FBAR)-based oscillator by tuning the supply voltage of the oscillator. The FBAR-based oscillator uses a high- Q FBAR that is made of a thin ZnO piezoelectric film sandwiched by two electrodes. The FBAR is significantly sensitive to temperature change, consequently resulting in large temperature sensitivity of the FBAR-based oscillator. In this paper, we present a temperature compensation technique that improves the temperature coefficient (TCf<inf>osc</inf>) of a 1.625-GHz FBAR-based oscillator from -118 ppm/K to less than 1 ppm/K by tuning the supply voltage of the oscillator. The tuning technique has a large frequency tunability of -4305 ppm/V.

Original languageEnglish (US)
Article number7114197
Pages (from-to)5272-5277
Number of pages6
JournalIEEE Sensors Journal
Volume15
Issue number9
DOIs
StatePublished - Sep 1 2015

Fingerprint

Acoustic resonators
temperature compensation
resonators
oscillators
acoustics
Tuning
tuning
Temperature
Electric potential
electric potential
Compensation and Redress
temperature
Q factors
Electrodes
electrodes
coefficients

Keywords

  • FBAR
  • FBAR Oscillator
  • Frequency tuning
  • Piezoelectric transducers
  • Temperature compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

A Temperature Compensation Concept for a Micromachined Film Bulk Acoustic Resonator Oscillator. / Zhang, Xu; Xu, Wencheng; Chae, Junseok.

In: IEEE Sensors Journal, Vol. 15, No. 9, 7114197, 01.09.2015, p. 5272-5277.

Research output: Contribution to journalArticle

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