A systematic analysis of HREM imaging of Wurtzite semiconductors

Rob W. Glaisher; A. E C Spargo; David Smith

doi:10.1016/0304-3991(89)90081-8

A systematic analysis of HREM imaging of Wurtzite semiconductors

Rob W. Glaisher, A. E C Spargo, David Smith

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19 Scopus citations

Abstract

The interpretation of high-resolution electron micrographs of materials with wurtzite structure has been investigated in a comparative study of the 〈1120〉-oriented semiconductors cadmium selenide (CdSe) and cadmium sulphide (CdS). Trends in scattering and imaging behaviour are shown to be similar to those exhibited by the related (cubic) sphalerite structure, in particular, the implications for image formation of the breakdown of Friedel's law under dynamical scattering conditions and the importance of both low- and high-resolution imaging for the determination of crystal thickness, defocus and polarity. Experimental images of 〈1120〉 CdSe have been recorded at 100 kV and 400 kV. A major limitation to image interpretation is shown to be the extreme sensitivity of materials with the wurtzite structure to the effects of beam or crystal misalignment due to the presence of dynamically forbidden reflections (Gjønnes-Moodie lines) in the projection investigated.

Original language	English (US)
Pages (from-to)	117-130
Number of pages	14
Journal	Ultramicroscopy
Volume	27
Issue number	2
DOIs	https://doi.org/10.1016/0304-3991(89)90081-8
State	Published - Mar 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(89)90081-8

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@article{3af1a26d15fe4665946852816528f0f2,

title = "A systematic analysis of HREM imaging of Wurtzite semiconductors",

abstract = "The interpretation of high-resolution electron micrographs of materials with wurtzite structure has been investigated in a comparative study of the 〈1120〉-oriented semiconductors cadmium selenide (CdSe) and cadmium sulphide (CdS). Trends in scattering and imaging behaviour are shown to be similar to those exhibited by the related (cubic) sphalerite structure, in particular, the implications for image formation of the breakdown of Friedel's law under dynamical scattering conditions and the importance of both low- and high-resolution imaging for the determination of crystal thickness, defocus and polarity. Experimental images of 〈1120〉 CdSe have been recorded at 100 kV and 400 kV. A major limitation to image interpretation is shown to be the extreme sensitivity of materials with the wurtzite structure to the effects of beam or crystal misalignment due to the presence of dynamically forbidden reflections (Gj{\o}nnes-Moodie lines) in the projection investigated.",

author = "Glaisher, {Rob W.} and Spargo, {A. E C} and David Smith",

year = "1989",

month = mar,

doi = "10.1016/0304-3991(89)90081-8",

language = "English (US)",

volume = "27",

pages = "117--130",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - A systematic analysis of HREM imaging of Wurtzite semiconductors

AU - Glaisher, Rob W.

AU - Spargo, A. E C

AU - Smith, David

PY - 1989/3

Y1 - 1989/3

N2 - The interpretation of high-resolution electron micrographs of materials with wurtzite structure has been investigated in a comparative study of the 〈1120〉-oriented semiconductors cadmium selenide (CdSe) and cadmium sulphide (CdS). Trends in scattering and imaging behaviour are shown to be similar to those exhibited by the related (cubic) sphalerite structure, in particular, the implications for image formation of the breakdown of Friedel's law under dynamical scattering conditions and the importance of both low- and high-resolution imaging for the determination of crystal thickness, defocus and polarity. Experimental images of 〈1120〉 CdSe have been recorded at 100 kV and 400 kV. A major limitation to image interpretation is shown to be the extreme sensitivity of materials with the wurtzite structure to the effects of beam or crystal misalignment due to the presence of dynamically forbidden reflections (Gjønnes-Moodie lines) in the projection investigated.

AB - The interpretation of high-resolution electron micrographs of materials with wurtzite structure has been investigated in a comparative study of the 〈1120〉-oriented semiconductors cadmium selenide (CdSe) and cadmium sulphide (CdS). Trends in scattering and imaging behaviour are shown to be similar to those exhibited by the related (cubic) sphalerite structure, in particular, the implications for image formation of the breakdown of Friedel's law under dynamical scattering conditions and the importance of both low- and high-resolution imaging for the determination of crystal thickness, defocus and polarity. Experimental images of 〈1120〉 CdSe have been recorded at 100 kV and 400 kV. A major limitation to image interpretation is shown to be the extreme sensitivity of materials with the wurtzite structure to the effects of beam or crystal misalignment due to the presence of dynamically forbidden reflections (Gjønnes-Moodie lines) in the projection investigated.

UR - http://www.scopus.com/inward/record.url?scp=0024621774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024621774&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(89)90081-8

DO - 10.1016/0304-3991(89)90081-8

M3 - Article

AN - SCOPUS:0024621774

SN - 0304-3991

VL - 27

SP - 117

EP - 130

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 2

ER -

A systematic analysis of HREM imaging of Wurtzite semiconductors

Abstract

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