A systematic analysis of HREM imaging of sphalerite semiconductors

Rob W. Glaisher, A. E C Spargo, David Smith

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The interpretation of high-resolution electron micrographs of semiconductor compounds having the sphalerite structure has been investigated both theoretically using extensive computer simulations and experimentally. The images display considerably more complexity and diversity than those of the diamond-structured elemental semiconductors, mainly due to the absence of a crystallographic center of symmetry. A systematic study of image contrast for these compounds reveals a dependence on the degree of their non-centrosymmetry. Subtle contrast effects result from the differences in both amplitude and phase of Bijvoet pairs of reflections that appear with increasing thickness, due to the breakdown of Friedel's law under dynamical diffraction conditions. A strategy is suggested for identifying the absolute direction of the polar axis in low-resolution images. It is shown that first- and second-order scattering effects can be used to determine the crystal polarity from the fine detail visible in experimental micrographs of sufficiently high resolution.

Original languageEnglish (US)
Pages (from-to)131-150
Number of pages20
JournalUltramicroscopy
Volume27
Issue number2
DOIs
StatePublished - 1989

Fingerprint

High resolution electron microscopy
zincblende
Semiconductor materials
Imaging techniques
Diamond
high resolution
image resolution
image contrast
Image resolution
Diamonds
polarity
Diffraction
computerized simulation
breakdown
diamonds
Scattering
Crystals
Electrons
Computer simulation
symmetry

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

A systematic analysis of HREM imaging of sphalerite semiconductors. / Glaisher, Rob W.; Spargo, A. E C; Smith, David.

In: Ultramicroscopy, Vol. 27, No. 2, 1989, p. 131-150.

Research output: Contribution to journalArticle

Glaisher, Rob W. ; Spargo, A. E C ; Smith, David. / A systematic analysis of HREM imaging of sphalerite semiconductors. In: Ultramicroscopy. 1989 ; Vol. 27, No. 2. pp. 131-150.
@article{f4262a00fc4f4744a34971dd0976b43b,
title = "A systematic analysis of HREM imaging of sphalerite semiconductors",
abstract = "The interpretation of high-resolution electron micrographs of semiconductor compounds having the sphalerite structure has been investigated both theoretically using extensive computer simulations and experimentally. The images display considerably more complexity and diversity than those of the diamond-structured elemental semiconductors, mainly due to the absence of a crystallographic center of symmetry. A systematic study of image contrast for these compounds reveals a dependence on the degree of their non-centrosymmetry. Subtle contrast effects result from the differences in both amplitude and phase of Bijvoet pairs of reflections that appear with increasing thickness, due to the breakdown of Friedel's law under dynamical diffraction conditions. A strategy is suggested for identifying the absolute direction of the polar axis in low-resolution images. It is shown that first- and second-order scattering effects can be used to determine the crystal polarity from the fine detail visible in experimental micrographs of sufficiently high resolution.",
author = "Glaisher, {Rob W.} and Spargo, {A. E C} and David Smith",
year = "1989",
doi = "10.1016/0304-3991(89)90082-X",
language = "English (US)",
volume = "27",
pages = "131--150",
journal = "Ultramicroscopy",
issn = "0304-3991",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - A systematic analysis of HREM imaging of sphalerite semiconductors

AU - Glaisher, Rob W.

AU - Spargo, A. E C

AU - Smith, David

PY - 1989

Y1 - 1989

N2 - The interpretation of high-resolution electron micrographs of semiconductor compounds having the sphalerite structure has been investigated both theoretically using extensive computer simulations and experimentally. The images display considerably more complexity and diversity than those of the diamond-structured elemental semiconductors, mainly due to the absence of a crystallographic center of symmetry. A systematic study of image contrast for these compounds reveals a dependence on the degree of their non-centrosymmetry. Subtle contrast effects result from the differences in both amplitude and phase of Bijvoet pairs of reflections that appear with increasing thickness, due to the breakdown of Friedel's law under dynamical diffraction conditions. A strategy is suggested for identifying the absolute direction of the polar axis in low-resolution images. It is shown that first- and second-order scattering effects can be used to determine the crystal polarity from the fine detail visible in experimental micrographs of sufficiently high resolution.

AB - The interpretation of high-resolution electron micrographs of semiconductor compounds having the sphalerite structure has been investigated both theoretically using extensive computer simulations and experimentally. The images display considerably more complexity and diversity than those of the diamond-structured elemental semiconductors, mainly due to the absence of a crystallographic center of symmetry. A systematic study of image contrast for these compounds reveals a dependence on the degree of their non-centrosymmetry. Subtle contrast effects result from the differences in both amplitude and phase of Bijvoet pairs of reflections that appear with increasing thickness, due to the breakdown of Friedel's law under dynamical diffraction conditions. A strategy is suggested for identifying the absolute direction of the polar axis in low-resolution images. It is shown that first- and second-order scattering effects can be used to determine the crystal polarity from the fine detail visible in experimental micrographs of sufficiently high resolution.

UR - http://www.scopus.com/inward/record.url?scp=0024621490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024621490&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(89)90082-X

DO - 10.1016/0304-3991(89)90082-X

M3 - Article

AN - SCOPUS:0024621490

VL - 27

SP - 131

EP - 150

JO - Ultramicroscopy

JF - Ultramicroscopy

SN - 0304-3991

IS - 2

ER -