A study of tungsten-titanium barriers in silver metallization

S. Bhagat, N. D. Theodore, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.

Original languageEnglish (US)
Title of host publicationMaterials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
PublisherMaterials Research Society
Pages153-158
Number of pages6
ISBN (Print)9781558999503
DOIs
StatePublished - Jan 1 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume990
ISSN (Print)0272-9172

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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