TY - GEN
T1 - A study of tungsten-titanium barriers in silver metallization
AU - Bhagat, S.
AU - Theodore, N. D.
AU - Alford, Terry
PY - 2007
Y1 - 2007
N2 - This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.
AB - This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.
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U2 - 10.1557/proc-0990-b08-10
DO - 10.1557/proc-0990-b08-10
M3 - Conference contribution
AN - SCOPUS:41549152656
SN - 9781558999503
T3 - Materials Research Society Symposium Proceedings
SP - 153
EP - 158
BT - Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
PB - Materials Research Society
T2 - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2007
ER -