Abstract

This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages153-158
Number of pages6
Volume990
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 10 2007Apr 12 2007

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/10/074/12/07

Fingerprint

Tungsten
Metallizing
Titanium
Silver
Diffusion barriers
Rutherford backscattering spectroscopy
Silicon
Temperature
Spectrometry
Microscopic examination
Metals
Spectroscopy
Vacuum
Ions
Transmission electron microscopy
Scanning
X rays
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Bhagat, S., Theodore, N. D., & Alford, T. (2007). A study of tungsten-titanium barriers in silver metallization. In Materials Research Society Symposium Proceedings (Vol. 990, pp. 153-158)

A study of tungsten-titanium barriers in silver metallization. / Bhagat, S.; Theodore, N. D.; Alford, Terry.

Materials Research Society Symposium Proceedings. Vol. 990 2007. p. 153-158.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bhagat, S, Theodore, ND & Alford, T 2007, A study of tungsten-titanium barriers in silver metallization. in Materials Research Society Symposium Proceedings. vol. 990, pp. 153-158, 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/10/07.
Bhagat S, Theodore ND, Alford T. A study of tungsten-titanium barriers in silver metallization. In Materials Research Society Symposium Proceedings. Vol. 990. 2007. p. 153-158
Bhagat, S. ; Theodore, N. D. ; Alford, Terry. / A study of tungsten-titanium barriers in silver metallization. Materials Research Society Symposium Proceedings. Vol. 990 2007. pp. 153-158
@inproceedings{db39ffcc241c42d4b6c8b1b099e3a9fd,
title = "A study of tungsten-titanium barriers in silver metallization",
abstract = "This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.",
author = "S. Bhagat and Theodore, {N. D.} and Terry Alford",
year = "2007",
language = "English (US)",
isbn = "9781558999503",
volume = "990",
pages = "153--158",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - A study of tungsten-titanium barriers in silver metallization

AU - Bhagat, S.

AU - Theodore, N. D.

AU - Alford, Terry

PY - 2007

Y1 - 2007

N2 - This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.

AB - This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C Silicon started moving into the tungsten-titanium film at temperatures above 600 °C Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.

UR - http://www.scopus.com/inward/record.url?scp=41549152656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549152656&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781558999503

VL - 990

SP - 153

EP - 158

BT - Materials Research Society Symposium Proceedings

ER -