A Study of Gamma-Ray Exposure of Cu-SiO2 Programmable Metallization Cells

W. Chen; Hugh Barnaby; Michael Kozicki; A. H. Edwards; Yago Gonzalez Velo; R. Fang; Keith Holbert; Shimeng Yu; W. Yu

doi:10.1109/TNS.2015.2478883

A Study of Gamma-Ray Exposure of Cu-SiO₂ Programmable Metallization Cells

W. Chen, Hugh Barnaby, Michael Kozicki, A. H. Edwards, Yago Gonzalez Velo, R. Fang, Keith Holbert, Shimeng Yu, W. Yu

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The Cu-SiO₂ based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu-SiO₂ PMC are investigated for the first time. The devices were step irradiated with gamma-rays to a maximum dose of 7.1 Mrad Cu-SiO₂). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu-SiO₂ PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad(Cu-SiO₂ of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.

Original language	English (US)
Article number	7322296
Pages (from-to)	2404-2411
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2015.2478883
State	Published - Dec 2015

Keywords

CMOS-compatibility
Conductive-bridging random access memory (CBRAM)
Cu-SiO
gamma-ray radiation
nonvolatile memory
programmable metallization cell
resistive switching

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2015.2478883

Cite this

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title = "A Study of Gamma-Ray Exposure of Cu-SiO2 Programmable Metallization Cells",

abstract = "The Cu-SiO2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu-SiO2 PMC are investigated for the first time. The devices were step irradiated with gamma-rays to a maximum dose of 7.1 Mrad Cu-SiO2). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu-SiO2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad(Cu-SiO2 of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.",

keywords = "CMOS-compatibility, Conductive-bridging random access memory (CBRAM), Cu-SiO, gamma-ray radiation, nonvolatile memory, programmable metallization cell, resistive switching",

author = "W. Chen and Hugh Barnaby and Michael Kozicki and Edwards, {A. H.} and {Gonzalez Velo}, Yago and R. Fang and Keith Holbert and Shimeng Yu and W. Yu",

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AU - Fang, R.

AU - Holbert, Keith

AU - Yu, Shimeng

AU - Yu, W.

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