Abstract

The Cu–SiO 2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu–SiO 2 PMC are investigated for the first time. The devices were step irradiated with 60Co gamma-rays to a maximum dose of 7.1 Mrad ( SiO2 ). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu–SiO 2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad( SiO2) of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Nov 9 2015

Fingerprint

Metallizing
Gamma rays
Ionizing radiation
gamma rays
dosage
cells
ionizing radiation
Dosimetry
endurance
immunity
Durability
Electric power utilization
Electronic equipment
Doping (additives)
Irradiation
compatibility
Radiation
Glass
CMOS
retarding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells. / Chen, W.; Barnaby, Hugh; Kozicki, Michael; Edwards, A. H.; Gonzalez Velo, Yago; Fang, R.; Holbert, Keith; Yu, Shimeng; Yu, W.

In: IEEE Transactions on Nuclear Science, 09.11.2015.

Research output: Contribution to journalArticle

@article{080d1e8a16a54cc38e2c28a2acd133c7,
title = "A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells",
abstract = "The Cu–SiO 2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu–SiO 2 PMC are investigated for the first time. The devices were step irradiated with 60Co gamma-rays to a maximum dose of 7.1 Mrad ( SiO2 ). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu–SiO 2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad( SiO2) of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.",
author = "W. Chen and Hugh Barnaby and Michael Kozicki and Edwards, {A. H.} and {Gonzalez Velo}, Yago and R. Fang and Keith Holbert and Shimeng Yu and W. Yu",
year = "2015",
month = "11",
day = "9",
doi = "10.1109/TNS.2015.2478883",
language = "English (US)",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells

AU - Chen, W.

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Edwards, A. H.

AU - Gonzalez Velo, Yago

AU - Fang, R.

AU - Holbert, Keith

AU - Yu, Shimeng

AU - Yu, W.

PY - 2015/11/9

Y1 - 2015/11/9

N2 - The Cu–SiO 2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu–SiO 2 PMC are investigated for the first time. The devices were step irradiated with 60Co gamma-rays to a maximum dose of 7.1 Mrad ( SiO2 ). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu–SiO 2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad( SiO2) of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.

AB - The Cu–SiO 2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu–SiO 2 PMC are investigated for the first time. The devices were step irradiated with 60Co gamma-rays to a maximum dose of 7.1 Mrad ( SiO2 ). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu–SiO 2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad( SiO2) of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.

UR - http://www.scopus.com/inward/record.url?scp=84946925651&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946925651&partnerID=8YFLogxK

U2 - 10.1109/TNS.2015.2478883

DO - 10.1109/TNS.2015.2478883

M3 - Article

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

ER -