TY - JOUR
T1 - A stretchable form of single-crystal silicon for high-performance electronics on rubber subtrates
AU - Khang, Dahl Young
AU - Jiang, Hanqing
AU - Huang, Young
AU - Rogers, John A.
PY - 2006/1/13
Y1 - 2006/1/13
N2 - We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance "wavy" metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.
AB - We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance "wavy" metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.
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U2 - 10.1126/science.1121401
DO - 10.1126/science.1121401
M3 - Article
C2 - 16357225
AN - SCOPUS:30844433983
SN - 0036-8075
VL - 311
SP - 208
EP - 212
JO - Science
JF - Science
IS - 5758
ER -