A strained silicon cold electron bolometer using Schottky contacts

T. L R Brien, P. A R Ade, P. S. Barry, C. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H C Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall, Philip Mauskopf

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

Original languageEnglish (US)
Article number043509
JournalApplied Physics Letters
Volume105
Issue number4
DOIs
StatePublished - Jul 28 2014

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bolometers
electric contacts
silicon
electrons
absorbers
transistor amplifiers
JFET
slot antennas
thermal noise
shot noise
radiation
spectral sensitivity
cross correlation
millimeter waves
charge carriers
temperature gradients
electromagnetic radiation
antennas
apertures
aluminum

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R., Morozov, D. V., ... Mauskopf, P. (2014). A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters, 105(4), [043509]. https://doi.org/10.1063/1.4892069

A strained silicon cold electron bolometer using Schottky contacts. / Brien, T. L R; Ade, P. A R; Barry, P. S.; Dunscombe, C.; Leadley, D. R.; Morozov, D. V.; Myronov, M.; Parker, E. H C; Prest, M. J.; Prunnila, M.; Sudiwala, R. V.; Whall, T. E.; Mauskopf, Philip.

In: Applied Physics Letters, Vol. 105, No. 4, 043509, 28.07.2014.

Research output: Contribution to journalArticle

Brien, TLR, Ade, PAR, Barry, PS, Dunscombe, C, Leadley, DR, Morozov, DV, Myronov, M, Parker, EHC, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, P 2014, 'A strained silicon cold electron bolometer using Schottky contacts', Applied Physics Letters, vol. 105, no. 4, 043509. https://doi.org/10.1063/1.4892069
Brien TLR, Ade PAR, Barry PS, Dunscombe C, Leadley DR, Morozov DV et al. A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters. 2014 Jul 28;105(4). 043509. https://doi.org/10.1063/1.4892069
Brien, T. L R ; Ade, P. A R ; Barry, P. S. ; Dunscombe, C. ; Leadley, D. R. ; Morozov, D. V. ; Myronov, M. ; Parker, E. H C ; Prest, M. J. ; Prunnila, M. ; Sudiwala, R. V. ; Whall, T. E. ; Mauskopf, Philip. / A strained silicon cold electron bolometer using Schottky contacts. In: Applied Physics Letters. 2014 ; Vol. 105, No. 4.
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