A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter

Qin Lei; Chunhui Liu; Yunpeng Si; Yifu Liu

doi:10.23919/IPEC.2018.8506669

A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter

Qin Lei, Chunhui Liu, Yunpeng Si, Yifu Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

The goal of this paper is to significantly improve the efficiency and power density of medium voltage drive and high-power converters. To achieve the goal, the proposed approach is to replace the high voltage Si IGBT by series connected SiC MOSFETs. Specifically, a game changing and universally applicable standard block of 'series connected SiC MOSFET' with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function. A down-scaled medium voltage drive prototype has been developed to demonstrate the feasibility and advantages of the standard block.

Original language	English (US)
Title of host publication	2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3742-3748
Number of pages	7
ISBN (Electronic)	9784886864055
DOIs	https://doi.org/10.23919/IPEC.2018.8506669
State	Published - Oct 22 2018
Event	8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 - Niigata, Japan Duration: May 20 2018 → May 24 2018

Other

Other	8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
Country/Territory	Japan
City	Niigata
Period	5/20/18 → 5/24/18

Keywords

Current source gate driver
Medium voltage drive
SiC MOSFET
Standard block

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.23919/IPEC.2018.8506669

Cite this

A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter. / Lei, Qin; Liu, Chunhui; Si, Yunpeng et al.
2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3742-3748 8506669.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lei, Q, Liu, C, Si, Y & Liu, Y 2018, A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter. in 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018., 8506669, Institute of Electrical and Electronics Engineers Inc., pp. 3742-3748, 8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018, Niigata, Japan, 5/20/18. https://doi.org/10.23919/IPEC.2018.8506669

@inproceedings{a7f111fad9d84335aebb2f1f6e610637,

title = "A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter",

abstract = "The goal of this paper is to significantly improve the efficiency and power density of medium voltage drive and high-power converters. To achieve the goal, the proposed approach is to replace the high voltage Si IGBT by series connected SiC MOSFETs. Specifically, a game changing and universally applicable standard block of 'series connected SiC MOSFET' with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function. A down-scaled medium voltage drive prototype has been developed to demonstrate the feasibility and advantages of the standard block.",

keywords = "Current source gate driver, Medium voltage drive, SiC MOSFET, Standard block",

author = "Qin Lei and Chunhui Liu and Yunpeng Si and Yifu Liu",

year = "2018",

month = oct,

day = "22",

doi = "10.23919/IPEC.2018.8506669",

language = "English (US)",

pages = "3742--3748",

booktitle = "2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 ; Conference date: 20-05-2018 Through 24-05-2018",

}

TY - GEN

T1 - A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter

AU - Lei, Qin

AU - Liu, Chunhui

AU - Si, Yunpeng

AU - Liu, Yifu

PY - 2018/10/22

Y1 - 2018/10/22

N2 - The goal of this paper is to significantly improve the efficiency and power density of medium voltage drive and high-power converters. To achieve the goal, the proposed approach is to replace the high voltage Si IGBT by series connected SiC MOSFETs. Specifically, a game changing and universally applicable standard block of 'series connected SiC MOSFET' with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function. A down-scaled medium voltage drive prototype has been developed to demonstrate the feasibility and advantages of the standard block.

AB - The goal of this paper is to significantly improve the efficiency and power density of medium voltage drive and high-power converters. To achieve the goal, the proposed approach is to replace the high voltage Si IGBT by series connected SiC MOSFETs. Specifically, a game changing and universally applicable standard block of 'series connected SiC MOSFET' with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function. A down-scaled medium voltage drive prototype has been developed to demonstrate the feasibility and advantages of the standard block.

KW - Current source gate driver

KW - Medium voltage drive

KW - SiC MOSFET

KW - Standard block

UR - http://www.scopus.com/inward/record.url?scp=85057317106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057317106&partnerID=8YFLogxK

U2 - 10.23919/IPEC.2018.8506669

DO - 10.23919/IPEC.2018.8506669

M3 - Conference contribution

AN - SCOPUS:85057317106

SP - 3742

EP - 3748

BT - 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018

Y2 - 20 May 2018 through 24 May 2018

ER -

A Standard Block of 'Series Connected SiC MOSFET' for Medium/High voltage converter

Abstract

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Keywords

ASJC Scopus subject areas

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