@inproceedings{d978707bbcc94201ad387714a02c8b8a,
title = "A spiking-resistant all-al rear-junction n-type Si solar cell",
abstract = "In this paper we report a spiking-resistant all-Al rear junction n-type monocrystalline Si solar cell with an efficiency of 18%. This 1×1 inch2 cell is fabricated by ionic liquid based electroplating of Al as the front electrode on an n-type Si solar cell with screen-printed Al as the rear junction. Partially- processed cells are prepared in an industrial R&D line of Canadian Solar. The cells are patterned by photolithography to open the front contact. A seed layer of Ni is deposited by sputtering to assist Al electroplating. A finished cell is annealed at different temperatures from 150-450°C to evaluate the effect of temperature on its performance. Compared to a p-type all-Al cell we reported before, the n-type all-Al cell is more resistant to high temperature Al spiking. Further comparison between this cell which has an electroplated Al front electrode and control cells with a screen-printed Ag front electrode demonstrates the feasibility of replacing Ag with electroplated Al as the front electrode.",
keywords = "Aluminum electroplating, Aluminum spiking, Back emitter, Back junction, Shunting, Silicon solar cell",
author = "Laidong Wang and Sun, {Wen Cheng} and Tracy, {Clarence J.} and Meng Tao and Yunyu Liu and Xusheng Wang and Guoqiang Xing",
note = "Funding Information: This work was supported by the U.S. National Science Foundation under grant no. 1336297. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366707",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1543--1548",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}