A spiking-resistant all-Al rear-junction n-type Si solar cell

Laidong Wang; Wen Cheng Sun; Clarence J. Tracy; Meng Tao; Yunyu Liu; Xusheng Wang; Guoqiang Xing

doi:10.1109/PVSC.2016.7750210

A spiking-resistant all-Al rear-junction n-type Si solar cell

Laidong Wang, Wen Cheng Sun, Clarence J. Tracy, Meng Tao, Yunyu Liu, Xusheng Wang, Guoqiang Xing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this paper we report a spiking-resistant all-Al rear junction n-type monocrystalline Si solar cell with an efficiency of 18%. This 1×1 inch² cell is fabricated by ionic liquid based electroplating of Al as the front electrode on an n-type Si solar cell with screen-printed Al as the rear junction. Partially-processed cells are prepared in an industrial R&D line of Canadian Solar. The cells are patterned by photolithography to open the front contact. A seed layer of Ni is deposited by sputtering to assist Al electroplating. A finished cell is annealed at different temperatures from 150-450°C to evaluate the effect of temperature on its performance. Compared to a p-type all-Al cell we reported before, the n-type all-Al cell is more resistant to high temperature Al spiking. Further comparison between this cell which has an electroplated Al front electrode and control cells with a screen-printed Ag front electrode demonstrates the feasibility of replacing Ag with electroplated Al as the front electrode.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2986-2989
Number of pages	4
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750210
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

aluminum electroplating
aluminum spiking
back emitter
back junction
shunting
silicon solar cell

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7750210

Cite this

A spiking-resistant all-Al rear-junction n-type Si solar cell. / Wang, Laidong; Sun, Wen Cheng; Tracy, Clarence J. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2986-2989 7750210.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, L, Sun, WC, Tracy, CJ, Tao, M, Liu, Y, Wang, X & Xing, G 2016, A spiking-resistant all-Al rear-junction n-type Si solar cell. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750210, Institute of Electrical and Electronics Engineers Inc., pp. 2986-2989, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750210

@inproceedings{6fa58882b4cd43bda2d135d21978e02c,

title = "A spiking-resistant all-Al rear-junction n-type Si solar cell",

abstract = "In this paper we report a spiking-resistant all-Al rear junction n-type monocrystalline Si solar cell with an efficiency of 18%. This 1×1 inch2 cell is fabricated by ionic liquid based electroplating of Al as the front electrode on an n-type Si solar cell with screen-printed Al as the rear junction. Partially-processed cells are prepared in an industrial R&D line of Canadian Solar. The cells are patterned by photolithography to open the front contact. A seed layer of Ni is deposited by sputtering to assist Al electroplating. A finished cell is annealed at different temperatures from 150-450°C to evaluate the effect of temperature on its performance. Compared to a p-type all-Al cell we reported before, the n-type all-Al cell is more resistant to high temperature Al spiking. Further comparison between this cell which has an electroplated Al front electrode and control cells with a screen-printed Ag front electrode demonstrates the feasibility of replacing Ag with electroplated Al as the front electrode.",

keywords = "aluminum electroplating, aluminum spiking, back emitter, back junction, shunting, silicon solar cell",

author = "Laidong Wang and Sun, {Wen Cheng} and Tracy, {Clarence J.} and Meng Tao and Yunyu Liu and Xusheng Wang and Guoqiang Xing",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750210",

language = "English (US)",

volume = "2016-November",

pages = "2986--2989",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

}

TY - GEN

T1 - A spiking-resistant all-Al rear-junction n-type Si solar cell

AU - Wang, Laidong

AU - Sun, Wen Cheng

AU - Tracy, Clarence J.

AU - Tao, Meng

AU - Liu, Yunyu

AU - Wang, Xusheng

AU - Xing, Guoqiang

PY - 2016/11/18

Y1 - 2016/11/18

N2 - In this paper we report a spiking-resistant all-Al rear junction n-type monocrystalline Si solar cell with an efficiency of 18%. This 1×1 inch2 cell is fabricated by ionic liquid based electroplating of Al as the front electrode on an n-type Si solar cell with screen-printed Al as the rear junction. Partially-processed cells are prepared in an industrial R&D line of Canadian Solar. The cells are patterned by photolithography to open the front contact. A seed layer of Ni is deposited by sputtering to assist Al electroplating. A finished cell is annealed at different temperatures from 150-450°C to evaluate the effect of temperature on its performance. Compared to a p-type all-Al cell we reported before, the n-type all-Al cell is more resistant to high temperature Al spiking. Further comparison between this cell which has an electroplated Al front electrode and control cells with a screen-printed Ag front electrode demonstrates the feasibility of replacing Ag with electroplated Al as the front electrode.

AB - In this paper we report a spiking-resistant all-Al rear junction n-type monocrystalline Si solar cell with an efficiency of 18%. This 1×1 inch2 cell is fabricated by ionic liquid based electroplating of Al as the front electrode on an n-type Si solar cell with screen-printed Al as the rear junction. Partially-processed cells are prepared in an industrial R&D line of Canadian Solar. The cells are patterned by photolithography to open the front contact. A seed layer of Ni is deposited by sputtering to assist Al electroplating. A finished cell is annealed at different temperatures from 150-450°C to evaluate the effect of temperature on its performance. Compared to a p-type all-Al cell we reported before, the n-type all-Al cell is more resistant to high temperature Al spiking. Further comparison between this cell which has an electroplated Al front electrode and control cells with a screen-printed Ag front electrode demonstrates the feasibility of replacing Ag with electroplated Al as the front electrode.

KW - aluminum electroplating

KW - aluminum spiking

KW - back emitter

KW - back junction

KW - shunting

KW - silicon solar cell

UR - http://www.scopus.com/inward/record.url?scp=85003422174&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003422174&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7750210

DO - 10.1109/PVSC.2016.7750210

M3 - Conference contribution

AN - SCOPUS:85003422174

VL - 2016-November

SP - 2986

EP - 2989

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

A spiking-resistant all-Al rear-junction n-type Si solar cell

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Keywords

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