A simplified process flow for silicon heterojunction interdigitated back contact solar cells: Using shadow masks and tunnel junctions

Stanislau Herasimenka, Clarence J. Tracy, William J. Dauksher, Christiana Honsberg, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

A novel process flow, which can allow the formation of interdigitated p- and n-type a-Si strips and corresponding transparent conductive oxide (TCO) and metal layers for silicon heterojunction interdigitated back contact (SHJ-IBC) solar cells using only a single alignment step and without using any resist patterning is presented. The flow is based on the deposition of a-Si, TCO and metal layers through a stack of shadow masks. Three variation of the flow are described. Several key process components to include a-Si deposition and H2 plasma etch through the shadow mask are demonstrated and described.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2486-2490
Number of pages5
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • contact formation
  • interdigitated back contact
  • silicon heterojunction
  • solar cell

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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