TY - GEN
T1 - A simplified model of Carbon nanotube transistor with applications to analog and digital design
AU - Sinha, Saurabh
AU - Balijepalli, Asha
AU - Cao, Yu
PY - 2008/8/25
Y1 - 2008/8/25
N2 - A compact model for the Carbon nanotube transistor (CNFET) is presented in this work. This simple model aids the first-order analysis for digital and analog design with CNFET. Based on the physical understanding of ballistic transport in the CNFET channel and tunneling at the Schottky barrier contacts, we develop a set of closed-form expressions that predict the device behavior with varying process and bias conditions. Using this model, we compare a CNFET with 22nm MOSFET in both digital and analog domains. We conclude that (1) a CNFET digital circuit can be more than 10X faster than 22nm CMOS; (2) there is 10X improvement in gm for comparable device dimensions, and (3) >25X improvement in gDS for comparable saturation current. This simple, scalable model is an efficient tool for analytical treatment of CNFET based circuits, revealing potential design opportunities, especially in the analog domain.
AB - A compact model for the Carbon nanotube transistor (CNFET) is presented in this work. This simple model aids the first-order analysis for digital and analog design with CNFET. Based on the physical understanding of ballistic transport in the CNFET channel and tunneling at the Schottky barrier contacts, we develop a set of closed-form expressions that predict the device behavior with varying process and bias conditions. Using this model, we compare a CNFET with 22nm MOSFET in both digital and analog domains. We conclude that (1) a CNFET digital circuit can be more than 10X faster than 22nm CMOS; (2) there is 10X improvement in gm for comparable device dimensions, and (3) >25X improvement in gDS for comparable saturation current. This simple, scalable model is an efficient tool for analytical treatment of CNFET based circuits, revealing potential design opportunities, especially in the analog domain.
UR - http://www.scopus.com/inward/record.url?scp=49749106010&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=49749106010&partnerID=8YFLogxK
U2 - 10.1109/ISQED.2008.4479786
DO - 10.1109/ISQED.2008.4479786
M3 - Conference contribution
AN - SCOPUS:49749106010
SN - 0769531172
SN - 9780769531175
T3 - Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
SP - 502
EP - 507
BT - Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
T2 - 9th International Symposium on Quality Electronic Design, ISQED 2008
Y2 - 17 March 2008 through 19 March 2008
ER -