A-Si:H/TCO contact resistance measurement using a Kelvin cross bridge resistor

Priyaranga Koswatta, Zachary Holman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Many have studied and reported properties of silicon heterojunctions solar cells in great detail, including open-circuit voltage and short-circuit current losses. However, little investigation has been dedicated to studying the series resistance contributions, especially at the maximum power point. Contact resistance between amorphous silicon and a transparent conductive oxide can have a significant contribution to series resistance, especially in silicon heterojunction solar cells. We propose the use of Kelvin cross bridge resistors to accurately measure the contact resistance between the doped amorphous silicon layer and the transparent conductive oxide layer typically found in a silicon heterojunction solar cell. This method allows an accurate measurement of the contact resistance without the interference of the sheet resistance of the highly resistive amorphous silicon layer.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2495-2498
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • Kelvin cross bridge resistor
  • amorphous silicon
  • contact resistance
  • silicon heterojunction
  • transparent conductive oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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