TY - GEN
T1 - A-Si:H/TCO contact resistance measurement using a Kelvin cross bridge resistor
AU - Koswatta, Priyaranga
AU - Holman, Zachary
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Many have studied and reported properties of silicon heterojunctions solar cells in great detail, including open-circuit voltage and short-circuit current losses. However, little investigation has been dedicated to studying the series resistance contributions, especially at the maximum power point. Contact resistance between amorphous silicon and a transparent conductive oxide can have a significant contribution to series resistance, especially in silicon heterojunction solar cells. We propose the use of Kelvin cross bridge resistors to accurately measure the contact resistance between the doped amorphous silicon layer and the transparent conductive oxide layer typically found in a silicon heterojunction solar cell. This method allows an accurate measurement of the contact resistance without the interference of the sheet resistance of the highly resistive amorphous silicon layer.
AB - Many have studied and reported properties of silicon heterojunctions solar cells in great detail, including open-circuit voltage and short-circuit current losses. However, little investigation has been dedicated to studying the series resistance contributions, especially at the maximum power point. Contact resistance between amorphous silicon and a transparent conductive oxide can have a significant contribution to series resistance, especially in silicon heterojunction solar cells. We propose the use of Kelvin cross bridge resistors to accurately measure the contact resistance between the doped amorphous silicon layer and the transparent conductive oxide layer typically found in a silicon heterojunction solar cell. This method allows an accurate measurement of the contact resistance without the interference of the sheet resistance of the highly resistive amorphous silicon layer.
KW - Kelvin cross bridge resistor
KW - amorphous silicon
KW - contact resistance
KW - silicon heterojunction
KW - transparent conductive oxides
UR - http://www.scopus.com/inward/record.url?scp=84912059110&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912059110&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925436
DO - 10.1109/PVSC.2014.6925436
M3 - Conference contribution
AN - SCOPUS:84912059110
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 2495
EP - 2498
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -