A self-consistent quantum mechanical simulation of P-channel strained SlGe MOSFETs

Santhosh Krishnan, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The hole current enhancement in a 25 nm strained SiGe p-channel MOSFET using quantum mechanical simulation was investigated. The 2D carrier eigenstates were constructed from the solution of the 1D Schrödinger equation along the depth direction, with each slice along the length direction having different set of 1D eigenstates. The DFT and tight binding model were utilized to calculate the 2D eigenstates in the structure that will naturally incorporate the alloy disorder scattering. The results show that there is a peak current enhancement of about 60% due to the bandstructure modification of the hole effective mass in the strained SiGe device.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages89-90
Number of pages2
StatePublished - Dec 1 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

ASJC Scopus subject areas

  • Engineering(all)

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    Krishnan, S., & Vasileska, D. (2004). A self-consistent quantum mechanical simulation of P-channel strained SlGe MOSFETs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (pp. 89-90). (2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts).