TY - GEN
T1 - A self-consistent quantum mechanical simulation of P-channel strained SlGe MOSFETs
AU - Krishnan, Santhosh
AU - Vasileska, Dragica
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The hole current enhancement in a 25 nm strained SiGe p-channel MOSFET using quantum mechanical simulation was investigated. The 2D carrier eigenstates were constructed from the solution of the 1D Schrödinger equation along the depth direction, with each slice along the length direction having different set of 1D eigenstates. The DFT and tight binding model were utilized to calculate the 2D eigenstates in the structure that will naturally incorporate the alloy disorder scattering. The results show that there is a peak current enhancement of about 60% due to the bandstructure modification of the hole effective mass in the strained SiGe device.
AB - The hole current enhancement in a 25 nm strained SiGe p-channel MOSFET using quantum mechanical simulation was investigated. The 2D carrier eigenstates were constructed from the solution of the 1D Schrödinger equation along the depth direction, with each slice along the length direction having different set of 1D eigenstates. The DFT and tight binding model were utilized to calculate the 2D eigenstates in the structure that will naturally incorporate the alloy disorder scattering. The results show that there is a peak current enhancement of about 60% due to the bandstructure modification of the hole effective mass in the strained SiGe device.
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M3 - Conference contribution
AN - SCOPUS:21844438509
SN - 0780386493
T3 - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
SP - 89
EP - 90
BT - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
T2 - 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
Y2 - 24 October 2004 through 27 October 2004
ER -