A self-consistent event biasing scheme for statistical enhancement

M. Nedjalkov; S. Ahmed; Dragica Vasileska

doi:10.1007/s10825-004-7066-5

A self-consistent event biasing scheme for statistical enhancement

M. Nedjalkov, S. Ahmed, Dragica Vasileska

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The event biasing approach for statistical enhancement is generalized for self-consistent device simulations, posed by mixed boundary and initial conditions transport problems. It is shown that the weight of the particles, as obtained by biasing of the Boltzmann equation, survives between the successive steps of solving the Poisson equation. Particular biasing techniques are applied to the simulation of a 15 nm MOSFET and the convergence of the terminal and channel currents is analyzed.

Original language	English (US)
Pages (from-to)	305-309
Number of pages	5
Journal	Journal of Computational Electronics
Volume	3
Issue number	3-4
DOIs	https://doi.org/10.1007/s10825-004-7066-5
State	Published - Oct 2004

Keywords

Event biasing
Monte Carlo
Statistical enhancement

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-004-7066-5

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abstract = "The event biasing approach for statistical enhancement is generalized for self-consistent device simulations, posed by mixed boundary and initial conditions transport problems. It is shown that the weight of the particles, as obtained by biasing of the Boltzmann equation, survives between the successive steps of solving the Poisson equation. Particular biasing techniques are applied to the simulation of a 15 nm MOSFET and the convergence of the terminal and channel currents is analyzed.",

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AU - Ahmed, S.

AU - Vasileska, Dragica

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AB - The event biasing approach for statistical enhancement is generalized for self-consistent device simulations, posed by mixed boundary and initial conditions transport problems. It is shown that the weight of the particles, as obtained by biasing of the Boltzmann equation, survives between the successive steps of solving the Poisson equation. Particular biasing techniques are applied to the simulation of a 15 nm MOSFET and the convergence of the terminal and channel currents is analyzed.

KW - Event biasing

KW - Monte Carlo

KW - Statistical enhancement

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JF - Journal of Computational Electronics

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ER -

A self-consistent event biasing scheme for statistical enhancement

Abstract

Keywords

ASJC Scopus subject areas

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