The event biasing approach for statistical enhancement is generalized for self-consistent device simulations, posed by mixed boundary and initial conditions transport problems. It is shown that the weight of the particles, as obtained by biasing of the Boltzmann equation, survives between the successive steps of solving the Poisson equation. Particular biasing techniques are applied to the simulation of a 15 nm MOSFET and the convergence of the terminal and channel currents is analyzed.
- Event biasing
- Monte Carlo
- Statistical enhancement
ASJC Scopus subject areas
- Computational Theory and Mathematics
- Electrical and Electronic Engineering