A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells

De Sheng Jiang, Zhao Ping Wang, C. Abraham, K. Syassen, Yong-Hang Zhang, K. Ploog

Research output: Contribution to journalArticle

2 Scopus citations


The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Fröhlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO2, mode) and InAs-like (LO1, mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for AlAs and InAs bonds in AlInAs alloy.

Original languageEnglish (US)
Pages (from-to)397-401
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Issue number3-4
Publication statusPublished - Mar 1995
Externally publishedYes



  • A. quantum wells
  • C. high pressure
  • C. Raman spectroscopy
  • D. phonons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Chemistry(all)

Cite this

Jiang, D. S., Wang, Z. P., Abraham, C., Syassen, K., Zhang, Y-H., & Ploog, K. (1995). A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells. Journal of Physics and Chemistry of Solids, 56(3-4), 397-401.