A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells

De Sheng Jiang; Zhao Ping Wang; C. Abraham; K. Syassen; Y. H. Zhang; K. Ploog

doi:10.1016/0022-3697(94)00214-2

A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells

De Sheng Jiang, Zhao Ping Wang, C. Abraham, K. Syassen, Y. H. Zhang, K. Ploog

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Fröhlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO₂, mode) and InAs-like (LO₁, mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for AlAs and InAs bonds in AlInAs alloy.

Original language	English (US)
Pages (from-to)	397-401
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	56
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-3697(94)00214-2
State	Published - 1995
Externally published	Yes

Keywords

A. quantum wells
C. Raman spectroscopy
C. high pressure
D. phonons

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/0022-3697(94)00214-2

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@article{ffc6dcab7ae84b1a999aa00b25bc0e32,

title = "A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells",

abstract = "The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Fr{\"o}hlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO2, mode) and InAs-like (LO1, mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for AlAs and InAs bonds in AlInAs alloy.",

keywords = "A. quantum wells, C. Raman spectroscopy, C. high pressure, D. phonons",

author = "Jiang, {De Sheng} and Wang, {Zhao Ping} and C. Abraham and K. Syassen and Zhang, {Y. H.} and K. Ploog",

year = "1995",

doi = "10.1016/0022-3697(94)00214-2",

language = "English (US)",

volume = "56",

pages = "397--401",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "3-4",

}

TY - JOUR

T1 - A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells

AU - Jiang, De Sheng

AU - Wang, Zhao Ping

AU - Abraham, C.

AU - Syassen, K.

AU - Zhang, Y. H.

AU - Ploog, K.

PY - 1995

Y1 - 1995

N2 - The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Fröhlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO2, mode) and InAs-like (LO1, mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for AlAs and InAs bonds in AlInAs alloy.

AB - The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Fröhlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO2, mode) and InAs-like (LO1, mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for AlAs and InAs bonds in AlInAs alloy.

KW - A. quantum wells

KW - C. Raman spectroscopy

KW - C. high pressure

KW - D. phonons

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U2 - 10.1016/0022-3697(94)00214-2

DO - 10.1016/0022-3697(94)00214-2

M3 - Article

AN - SCOPUS:58149366412

SN - 0022-3697

VL - 56

SP - 397

EP - 401

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 3-4

ER -

A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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