A quantitative measure of medium-range order in amorphous materials from transmission electron micrographs

R. K. Dash, P. M. Voyles, J. M. Gibson, M. M.J. Treacy, P. Keblinski

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

We propose an extension to the technique of fluctuation electron microscopy that quantitatively measures a medium-range order correlation length in amorphous materials. In both simulated images from computer-generated paracrystalline amorphous silicon models and experimental images of amorphous silicon, we find that the spatial autocorrelation function of dark-field transmission electron micrographs of amorphous materials exhibits a simple exponential decay. The decay length measures a nanometre-scale structural correlation length in the sample, although it also depends on the microscope resolution. We also propose a new interpretation of the fluctuation microscopy image variance in terms of fluctuations in local atomic pair distribution functions.

Original languageEnglish (US)
Pages (from-to)S2425-S2435
JournalJournal of Physics Condensed Matter
Volume15
Issue number31
DOIs
StatePublished - Aug 13 2003

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this