A pseudo-concurrent 0.18μm multi-band CMOS LNA

Seyed Hossein Miri Lavasani, Bikram Chaudhuri, Sayfe Kiaei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

A novel multi -band LNA, which can switch between standards GSM800MHz/GSM1.8GHz or GSM800MHz/WCDMA2.1GHz, is presented. The LNA provides 22.4dB gain at 800MHz and 14.1 dB at 1.8GHz. The device selects between GSM1.8GHz/WCDMA2.1GHz by means of a simple PMOS switch. The LNA is fabricated in 0.18μm technology using only CMOS transistors. Post-Layout simulation results indicate a Noise Figure below 1.6dB in all bands while drawing 8.5mA from a 1.8V power supply. To save die area, the input matching circuit is partially off-chip.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
EditorsH. Thal
Volume1
StatePublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: Jun 8 2003Jun 13 2003

Other

Other2003 IEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CityPhiladelphia, PA
Period6/8/036/13/03

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Lavasani, S. H. M., Chaudhuri, B., & Kiaei, S. (2003). A pseudo-concurrent 0.18μm multi-band CMOS LNA. In H. Thal (Ed.), IEEE MTT-S International Microwave Symposium Digest (Vol. 1)