A pinned photodiode analytic model enabling opto-electronic circuit simulation

Haifeng Zhu; Min Shi; Yanmei Su; Xiaojin Zhao; Qin Chen; Cao Yu; Jin He; Hao Wang; Yun Ye; Hongyu He

doi:10.1166/jctn.2014.3353

A pinned photodiode analytic model enabling opto-electronic circuit simulation

Haifeng Zhu, Min Shi, Yanmei Su, Xiaojin Zhao, Qin Chen, Cao Yu, Jin He, Hao Wang, Yun Ye, Hongyu He

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

Original language	English (US)
Pages (from-to)	313-317
Number of pages	5
Journal	Journal of Computational and Theoretical Nanoscience
Volume	11
Issue number	2
DOIs	https://doi.org/10.1166/jctn.2014.3353
State	Published - Feb 2014
Externally published	Yes

Keywords

CMOS Image Sensor
Drift-Diffussion Model
Pinned Photodiode

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics
Computational Mathematics
Electrical and Electronic Engineering

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10.1166/jctn.2014.3353

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title = "A pinned photodiode analytic model enabling opto-electronic circuit simulation",

abstract = "An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.",

keywords = "CMOS Image Sensor, Drift-Diffussion Model, Pinned Photodiode",

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T1 - A pinned photodiode analytic model enabling opto-electronic circuit simulation

AU - Zhu, Haifeng

AU - Shi, Min

AU - Su, Yanmei

AU - Zhao, Xiaojin

AU - Chen, Qin

AU - Yu, Cao

AU - He, Jin

AU - Wang, Hao

AU - Ye, Yun

AU - He, Hongyu

PY - 2014/2

Y1 - 2014/2

N2 - An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

AB - An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

KW - CMOS Image Sensor

KW - Drift-Diffussion Model

KW - Pinned Photodiode

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A pinned photodiode analytic model enabling opto-electronic circuit simulation

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Keywords

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