TY - GEN
T1 - A phenomenological model of oxygen ion transport for metal oxide resistive switching memory
AU - Yu, Shimeng
AU - Wong, H. S.Philip
PY - 2010
Y1 - 2010
N2 - Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. Also, the voltage-time dilemma between fast switching and long retention is explained by the non-linearity of the ionic transport under high electric field. Experimental data are employed for model verification.
AB - Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. Also, the voltage-time dilemma between fast switching and long retention is explained by the non-linearity of the ionic transport under high electric field. Experimental data are employed for model verification.
UR - http://www.scopus.com/inward/record.url?scp=77957910253&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957910253&partnerID=8YFLogxK
U2 - 10.1109/IMW.2010.5488321
DO - 10.1109/IMW.2010.5488321
M3 - Conference contribution
AN - SCOPUS:77957910253
SN - 9781424467211
T3 - 2010 IEEE International Memory Workshop, IMW 2010
BT - 2010 IEEE International Memory Workshop, IMW 2010
T2 - 2010 IEEE International Memory Workshop, IMW 2010
Y2 - 16 May 2010 through 19 May 2010
ER -