A phenomenological model of oxygen ion transport for metal oxide resistive switching memory

Shimeng Yu, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. Also, the voltage-time dilemma between fast switching and long retention is explained by the non-linearity of the ionic transport under high electric field. Experimental data are employed for model verification.

Original languageEnglish (US)
Title of host publication2010 IEEE International Memory Workshop, IMW 2010
DOIs
StatePublished - Oct 20 2010
Event2010 IEEE International Memory Workshop, IMW 2010 - Seoul, Korea, Republic of
Duration: May 16 2010May 19 2010

Publication series

Name2010 IEEE International Memory Workshop, IMW 2010

Other

Other2010 IEEE International Memory Workshop, IMW 2010
CountryKorea, Republic of
CitySeoul
Period5/16/105/19/10

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ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Yu, S., & Wong, H. S. P. (2010). A phenomenological model of oxygen ion transport for metal oxide resistive switching memory. In 2010 IEEE International Memory Workshop, IMW 2010 [5488321] (2010 IEEE International Memory Workshop, IMW 2010). https://doi.org/10.1109/IMW.2010.5488321