A phenomenological model of oxygen ion transport for metal oxide resistive switching memory

Shimeng Yu, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. Also, the voltage-time dilemma between fast switching and long retention is explained by the non-linearity of the ionic transport under high electric field. Experimental data are employed for model verification.

Original languageEnglish (US)
Title of host publication2010 IEEE International Memory Workshop, IMW 2010
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 IEEE International Memory Workshop, IMW 2010 - Seoul, Korea, Republic of
Duration: May 16 2010May 19 2010

Other

Other2010 IEEE International Memory Workshop, IMW 2010
CountryKorea, Republic of
CitySeoul
Period5/16/105/19/10

Fingerprint

Data storage equipment
Oxides
Oxygen
Ions
Metals
Electric fields
Electrodes
Computer simulation
Electric potential

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Yu, S., & Wong, H. S. P. (2010). A phenomenological model of oxygen ion transport for metal oxide resistive switching memory. In 2010 IEEE International Memory Workshop, IMW 2010 [5488321] https://doi.org/10.1109/IMW.2010.5488321

A phenomenological model of oxygen ion transport for metal oxide resistive switching memory. / Yu, Shimeng; Wong, H. S Philip.

2010 IEEE International Memory Workshop, IMW 2010. 2010. 5488321.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, S & Wong, HSP 2010, A phenomenological model of oxygen ion transport for metal oxide resistive switching memory. in 2010 IEEE International Memory Workshop, IMW 2010., 5488321, 2010 IEEE International Memory Workshop, IMW 2010, Seoul, Korea, Republic of, 5/16/10. https://doi.org/10.1109/IMW.2010.5488321
Yu, Shimeng ; Wong, H. S Philip. / A phenomenological model of oxygen ion transport for metal oxide resistive switching memory. 2010 IEEE International Memory Workshop, IMW 2010. 2010.
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