A phenomenological model for the reset mechanism of metal oxide RRAM

Shimeng Yu, H. S Philip Wong

Research output: Contribution to journalArticle

142 Citations (Scopus)

Abstract

The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.

Original languageEnglish (US)
Article number5611571
Pages (from-to)1455-1457
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 2010
Externally publishedYes

Fingerprint

Oxides
Metals
Ions
Electrodes
Joule heating
Dissolution
RRAM
Oxygen
Computer simulation

Keywords

  • Ion migration
  • Joule heating
  • resistive switching
  • switching polarity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A phenomenological model for the reset mechanism of metal oxide RRAM. / Yu, Shimeng; Wong, H. S Philip.

In: IEEE Electron Device Letters, Vol. 31, No. 12, 5611571, 12.2010, p. 1455-1457.

Research output: Contribution to journalArticle

Yu, Shimeng ; Wong, H. S Philip. / A phenomenological model for the reset mechanism of metal oxide RRAM. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 12. pp. 1455-1457.
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