A phenomenological model for the reset mechanism of metal oxide RRAM

Shimeng Yu, H. S.Philip Wong

Research output: Contribution to journalArticlepeer-review

158 Scopus citations

Abstract

The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.

Original languageEnglish (US)
Article number5611571
Pages (from-to)1455-1457
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 2010

Keywords

  • Ion migration
  • Joule heating
  • resistive switching
  • switching polarity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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