The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.
- Ion migration
- Joule heating
- resistive switching
- switching polarity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering