A phenomenological model for the reset mechanism of metal oxide RRAM

Shimeng Yu; H. S.Philip Wong

doi:10.1109/LED.2010.2078794

A phenomenological model for the reset mechanism of metal oxide RRAM

Shimeng Yu, H. S.Philip Wong

Research output: Contribution to journal › Article › peer-review

183 Scopus citations

Abstract

The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.

Original language	English (US)
Article number	5611571
Pages (from-to)	1455-1457
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/LED.2010.2078794
State	Published - Dec 2010
Externally published	Yes

Keywords

Ion migration
Joule heating
resistive switching
switching polarity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2078794

Cite this

@article{00f035d622fc4767b8557b684979f326,

title = "A phenomenological model for the reset mechanism of metal oxide RRAM",

abstract = "The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.",

keywords = "Ion migration, Joule heating, resistive switching, switching polarity",

author = "Shimeng Yu and Wong, {H. S.Philip}",

note = "Funding Information: Manuscript received September 3, 2010; revised September 10, 2010; accepted September 10, 2010. Date of publication October 28, 2010; date of current version November 24, 2010. This work was supported in part by Defense Advanced Research Projects Agency{\textquoteright}s SyNAPSE (DSO Program Manager T. Hylton), by the National Science Foundation (ECCS 0950305), by the member companies of the Stanford Non-Volatile Memory Technology Research Initiative, and by the C2S2 Focus Center, one of the six research centers funded under the Focus Center Research Program, a Semiconductor Research Corporation subsidiary. The work of S. Yu was supported by a Stanford Graduate Fellowship. The review of this letter was arranged by Editor S. Kawamura.",

year = "2010",

month = dec,

doi = "10.1109/LED.2010.2078794",

language = "English (US)",

volume = "31",

pages = "1455--1457",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A phenomenological model for the reset mechanism of metal oxide RRAM

AU - Yu, Shimeng

AU - Wong, H. S.Philip

N1 - Funding Information: Manuscript received September 3, 2010; revised September 10, 2010; accepted September 10, 2010. Date of publication October 28, 2010; date of current version November 24, 2010. This work was supported in part by Defense Advanced Research Projects Agency’s SyNAPSE (DSO Program Manager T. Hylton), by the National Science Foundation (ECCS 0950305), by the member companies of the Stanford Non-Volatile Memory Technology Research Initiative, and by the C2S2 Focus Center, one of the six research centers funded under the Focus Center Research Program, a Semiconductor Research Corporation subsidiary. The work of S. Yu was supported by a Stanford Graduate Fellowship. The review of this letter was arranged by Editor S. Kawamura.

PY - 2010/12

Y1 - 2010/12

N2 - The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.

AB - The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material- dependent switching polarity and the voltagetime dilemma between fast switching and long retention.

KW - Ion migration

KW - Joule heating

KW - resistive switching

KW - switching polarity

UR - http://www.scopus.com/inward/record.url?scp=78649444385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649444385&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2078794

DO - 10.1109/LED.2010.2078794

M3 - Article

AN - SCOPUS:78649444385

SN - 0741-3106

VL - 31

SP - 1455

EP - 1457

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 5611571

ER -

A phenomenological model for the reset mechanism of metal oxide RRAM

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this