### Abstract

An expression relating the resistivity, R, of a segregated system of conducting and non-conducting media to the volume fraction, V, of the conducting component has been derived by applying percolation theory to a simple but realistic model of the system microstructure. It is proposed that R varies as (p'-p_{c})^{-mu} where p_{c} is the percolation threshold, mu is the conductivity critical exponent for 3D systems and p' is the fraction of sites in the conducting region that are filled by conducting particles; p' is related to V. The expression can be used to fit the observed R-V curves (blending curves) of thick film resistor systems, which are known to have a segregated structure. The model is valid over a useful range of volume fractions and employs typical values for p_{c} and mu .

Original language | English (US) |
---|---|

Article number | 015 |

Pages (from-to) | 2253-2268 |

Number of pages | 16 |

Journal | Journal of Physics D: Applied Physics |

Volume | 14 |

Issue number | 12 |

DOIs | |

State | Published - 1981 |

Externally published | Yes |

### Fingerprint

### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

### Cite this

*Journal of Physics D: Applied Physics*,

*14*(12), 2253-2268. [015]. https://doi.org/10.1088/0022-3727/14/12/015

**A percolation model of conduction in segregated systems of metallic and insulating materials : Application to thick film resistors.** / Ewen, P. J S; Robertson, J. M.

Research output: Contribution to journal › Article

*Journal of Physics D: Applied Physics*, vol. 14, no. 12, 015, pp. 2253-2268. https://doi.org/10.1088/0022-3727/14/12/015

}

TY - JOUR

T1 - A percolation model of conduction in segregated systems of metallic and insulating materials

T2 - Application to thick film resistors

AU - Ewen, P. J S

AU - Robertson, J. M.

PY - 1981

Y1 - 1981

N2 - An expression relating the resistivity, R, of a segregated system of conducting and non-conducting media to the volume fraction, V, of the conducting component has been derived by applying percolation theory to a simple but realistic model of the system microstructure. It is proposed that R varies as (p'-pc)-mu where pc is the percolation threshold, mu is the conductivity critical exponent for 3D systems and p' is the fraction of sites in the conducting region that are filled by conducting particles; p' is related to V. The expression can be used to fit the observed R-V curves (blending curves) of thick film resistor systems, which are known to have a segregated structure. The model is valid over a useful range of volume fractions and employs typical values for pc and mu .

AB - An expression relating the resistivity, R, of a segregated system of conducting and non-conducting media to the volume fraction, V, of the conducting component has been derived by applying percolation theory to a simple but realistic model of the system microstructure. It is proposed that R varies as (p'-pc)-mu where pc is the percolation threshold, mu is the conductivity critical exponent for 3D systems and p' is the fraction of sites in the conducting region that are filled by conducting particles; p' is related to V. The expression can be used to fit the observed R-V curves (blending curves) of thick film resistor systems, which are known to have a segregated structure. The model is valid over a useful range of volume fractions and employs typical values for pc and mu .

UR - http://www.scopus.com/inward/record.url?scp=0019678656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019678656&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/14/12/015

DO - 10.1088/0022-3727/14/12/015

M3 - Article

AN - SCOPUS:0019678656

VL - 14

SP - 2253

EP - 2268

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 12

M1 - 015

ER -