### Abstract

An expression relating the resistivity, R, of a segregated system of conducting and non-conducting media to the volume fraction, V, of the conducting component has been derived by applying percolation theory to a simple but realistic model of the system microstructure. It is proposed that R varies as (p'-p_{c})^{-mu} where p_{c} is the percolation threshold, mu is the conductivity critical exponent for 3D systems and p' is the fraction of sites in the conducting region that are filled by conducting particles; p' is related to V. The expression can be used to fit the observed R-V curves (blending curves) of thick film resistor systems, which are known to have a segregated structure. The model is valid over a useful range of volume fractions and employs typical values for p_{c} and mu .

Original language | English (US) |
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Article number | 015 |

Pages (from-to) | 2253-2268 |

Number of pages | 16 |

Journal | Journal of Physics D: Applied Physics |

Volume | 14 |

Issue number | 12 |

DOIs | |

State | Published - Dec 1 1981 |

### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films

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## Cite this

*Journal of Physics D: Applied Physics*,

*14*(12), 2253-2268. [015]. https://doi.org/10.1088/0022-3727/14/12/015