A numerical study on THZ-wave generation and detection of metal-oxide-semiconductor field-effect transistor

Cheng Wang, Xuehao Mou, Jin He, Yun Ye, Hongyu He, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A numerical method is developed in this paper to simulate FET-based THz wave generation and detection. The method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the previous theory, proving the validity of the developed numerical method and providing useful data for MOS field effect transistor THZ generation and detection analysis and optimization.

Original languageEnglish (US)
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages629-632
Number of pages4
StatePublished - 2012
Externally publishedYes
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Country/TerritoryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Keywords

  • FET
  • Hydrodynamic equation
  • Numerical simulation
  • THz-wave

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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