A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect

Jing Jing Li, Swee Hoe Lim, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

A pulsed voltage bias method is proposed to eliminate the measurement artifacts of external quantum efficiency (EQE) of multi-junction solar cells. Under the DC voltage and light biases in the EQE measurements, the output current and voltage drops on the subcells under the chopped monochromatic light are affected by the low shunt resistances of the Ge subcells, which cause the EQE measurement artifacts for InGaP/InGaAs/Ge triple junction solar cells. A pulsed voltage bias superimposed on the DC voltage and light biases is used to properly control the output current and subcell voltages to eliminate the measurement artifacts. SPICE simulation confirms that the proposed method completely removes the measurement artifacts.

Original languageEnglish (US)
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
DOIs
StatePublished - Apr 26 2012
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: Jan 23 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8256
ISSN (Print)0277-786X

Other

OtherPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
CountryUnited States
CitySan Francisco, CA
Period1/23/121/26/12

Keywords

  • Measurement artifacts
  • Pulsed voltage bias
  • Quantum efficiency
  • Shunt
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Li, J. J., Lim, S. H., & Zhang, Y-H. (2012). A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices [825616] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8256). https://doi.org/10.1117/12.912790