A novel mechanism for spin dephasing due to spin-conserving scatterings

M. W. Wu, Cun-Zheng Ning

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.

Original languageEnglish (US)
Pages (from-to)373-376
Number of pages4
JournalEuropean Physical Journal B
Volume18
Issue number3
StatePublished - Dec 1 2000
Externally publishedYes

Fingerprint

Optical transitions
Momentum
Scattering
Semiconductor materials
Electrons
scattering
optical transition
electron energy
momentum

Keywords

  • 42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
  • 67.57.Lm Spin dynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

A novel mechanism for spin dephasing due to spin-conserving scatterings. / Wu, M. W.; Ning, Cun-Zheng.

In: European Physical Journal B, Vol. 18, No. 3, 01.12.2000, p. 373-376.

Research output: Contribution to journalArticle

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