A novel mechanism for spin dephasing due to spin-conserving scatterings

M. W. Wu; C. Z. Ning

doi:10.1007/s100510070021

A novel mechanism for spin dephasing due to spin-conserving scatterings

M. W. Wu, C. Z. Ning

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.

Original language	English (US)
Pages (from-to)	373-376
Number of pages	4
Journal	European Physical Journal B
Volume	18
Issue number	3
DOIs	https://doi.org/10.1007/s100510070021
State	Published - Dec 1 2000
Externally published	Yes

Keywords

42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
67.57.Lm Spin dynamics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1007/s100510070021

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abstract = "A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.",

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AU - Ning, C. Z.

PY - 2000/12/1

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N2 - A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.

AB - A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.

KW - 42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

KW - 67.57.Lm Spin dynamics

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JF - Zeitschrift für Physik B Condensed Matter and Quanta

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A novel mechanism for spin dephasing due to spin-conserving scatterings

Abstract

Keywords

ASJC Scopus subject areas

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