@inproceedings{551be6e15d32411aaa73aa38ca9322a6,
title = "A novel backside gate structure to improve device performance",
abstract = "A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%",
author = "Hwang, {Y. H.} and Weidi Zhu and Chen Dong and Shihyun Ahn and Fan Ren and Kravchenko, {Ivan I.} and David Smith and Pearton, {Stephen J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06601.0185ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "185--190",
editor = "S. Jang and K. Shenai and Hunter, {G. W.} and F. Ren and C. O'Dwyer and Mishra, {K. C.}",
booktitle = "Wide Bandgap Semiconductor Materials and Devices 16",
edition = "1",
}