A novel backside gate structure to improve device performance

Y. H. Hwang, Weidi Zhu, Chen Dong, Shihyun Ahn, Fan Ren, Ivan I. Kravchenko, David Smith, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%

Original languageEnglish (US)
Title of host publicationWide Bandgap Semiconductor Materials and Devices 16
EditorsS. Jang, K. C. Mishra, K. Shenai, C. O'Dwyer, G. W. Hunter, F. Ren
PublisherElectrochemical Society Inc.
Pages185-190
Number of pages6
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number1
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period5/24/155/28/15

ASJC Scopus subject areas

  • Engineering(all)

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