A novel backside gate structure to improve device performance

Y. H. Hwang, Weidi Zhu, Chen Dong, Shihyun Ahn, Fan Ren, Ivan I. Kravchenko, David Smith, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages185-190
Number of pages6
Volume66
Edition1
ISBN (Print)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
CountryUnited States
CityChicago
Period5/24/155/28/15

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hwang, Y. H., Zhu, W., Dong, C., Ahn, S., Ren, F., Kravchenko, I. I., ... Pearton, S. J. (2015). A novel backside gate structure to improve device performance. In ECS Transactions (1 ed., Vol. 66, pp. 185-190). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0185ecst