A novel backside gate structure to improve device performance

Y. H. Hwang, Weidi Zhu, Chen Dong, Shihyun Ahn, Fan Ren, Ivan I. Kravchenko, David Smith, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages185-190
Number of pages6
Volume66
Edition1
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
CountryUnited States
CityChicago
Period5/24/155/28/15

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Electric breakdown
Leakage currents

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hwang, Y. H., Zhu, W., Dong, C., Ahn, S., Ren, F., Kravchenko, I. I., ... Pearton, S. J. (2015). A novel backside gate structure to improve device performance. In ECS Transactions (1 ed., Vol. 66, pp. 185-190). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0185ecst

A novel backside gate structure to improve device performance. / Hwang, Y. H.; Zhu, Weidi; Dong, Chen; Ahn, Shihyun; Ren, Fan; Kravchenko, Ivan I.; Smith, David; Pearton, Stephen J.

ECS Transactions. Vol. 66 1. ed. Electrochemical Society Inc., 2015. p. 185-190.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hwang, YH, Zhu, W, Dong, C, Ahn, S, Ren, F, Kravchenko, II, Smith, D & Pearton, SJ 2015, A novel backside gate structure to improve device performance. in ECS Transactions. 1 edn, vol. 66, Electrochemical Society Inc., pp. 185-190, Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting, Chicago, United States, 5/24/15. https://doi.org/10.1149/06601.0185ecst
Hwang YH, Zhu W, Dong C, Ahn S, Ren F, Kravchenko II et al. A novel backside gate structure to improve device performance. In ECS Transactions. 1 ed. Vol. 66. Electrochemical Society Inc. 2015. p. 185-190 https://doi.org/10.1149/06601.0185ecst
Hwang, Y. H. ; Zhu, Weidi ; Dong, Chen ; Ahn, Shihyun ; Ren, Fan ; Kravchenko, Ivan I. ; Smith, David ; Pearton, Stephen J. / A novel backside gate structure to improve device performance. ECS Transactions. Vol. 66 1. ed. Electrochemical Society Inc., 2015. pp. 185-190
@inproceedings{551be6e15d32411aaa73aa38ca9322a6,
title = "A novel backside gate structure to improve device performance",
abstract = "A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40{\%}. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7{\%}",
author = "Hwang, {Y. H.} and Weidi Zhu and Chen Dong and Shihyun Ahn and Fan Ren and Kravchenko, {Ivan I.} and David Smith and Pearton, {Stephen J.}",
year = "2015",
doi = "10.1149/06601.0185ecst",
language = "English (US)",
isbn = "9781607685395",
volume = "66",
pages = "185--190",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "1",

}

TY - GEN

T1 - A novel backside gate structure to improve device performance

AU - Hwang, Y. H.

AU - Zhu, Weidi

AU - Dong, Chen

AU - Ahn, Shihyun

AU - Ren, Fan

AU - Kravchenko, Ivan I.

AU - Smith, David

AU - Pearton, Stephen J.

PY - 2015

Y1 - 2015

N2 - A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%

AB - A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%

UR - http://www.scopus.com/inward/record.url?scp=84931373862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84931373862&partnerID=8YFLogxK

U2 - 10.1149/06601.0185ecst

DO - 10.1149/06601.0185ecst

M3 - Conference contribution

AN - SCOPUS:84931373862

SN - 9781607685395

VL - 66

SP - 185

EP - 190

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -