A novel approach for determining the effective tunneling mass of electrons in HfO₂ and other high-K alternative gate dielectrics for advanced CMOS devices

Engineering & Materials Science

• Conduction bands 100%
• Gate dielectrics 83%
• Electrons 59%
• Electron tunneling 45%
• Transition metals 43%
• Rare earths 36%
• Permittivity 29%
• Oxides 25%

Chemical Compounds

• Tunneling 59%
• Dielectric Material 51%
• Band Offset 37%
• Electron Particle 31%
• Conduction Band 12%
• Energy 11%
• Dielectric Constant 10%
• Lanthanoid Atom 8%
• Transition Element 8%
• Oxide 6%
• Reaction Yield 4%

Physics & Astronomy

• CMOS 52%
• conduction bands 25%
• electrons 24%
• electron tunneling 16%
• optical measurement 14%
• proportion 13%
• rare earth elements 12%
• transition metals 12%
• permittivity 10%
• products 9%
• oxides 9%
• energy 8%
• estimates 8%