The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.
title = "A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage",
abstract = "The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.",
author = "Lawrence Clark",
year = "2005",
month = may
day = "18",
language = "English (US)",
type = "Patent",
}
TY - PAT
T1 - A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage
AU - Clark, Lawrence
PY - 2005/5/18
Y1 - 2005/5/18
N2 - The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.
AB - The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.