A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage

Lawrence Clark

A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage

Lawrence Clark (Inventor)

Arizona State University

Research output: Patent

Abstract

The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.

Original language	English (US)
State	Published - May 18 2005

Fingerprint Dive into the research topics of 'A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage'. Together they form a unique fingerprint.

Cite this

@misc{b52595b77c20493b871a56ee98f868fe,

title = "A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage",

abstract = "The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.",

author = "Lawrence Clark",

year = "2005",

month = may,

day = "18",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - A Novel 6 Transistor SRAM with Intrinsically High Stability & Low Leakage

AU - Clark, Lawrence

PY - 2005/5/18

Y1 - 2005/5/18

N2 - The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.

AB - The conventional random access memory used in cache of microprocessor or in the memory of hand held devices are not suitable to be used in very low voltages. They have very low stability and very high leakage at low voltages. So there is a high probability for storing wrong data which is very crucial. The invention addresses this issue and makes the SRAM highly stable and to suffer with very low leakage. The probability of storing wrong data is avoided.

M3 - Patent

ER -